Shinsuke Harada

Tsukuba University of Technology — Japan

Engineering · Physical Sciences

30h-index3.1kcitations277works1.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(242), Semiconductor materials and devices(190), Advancements in Semiconductor Devices and Circuit Design(86), Semiconductor materials and interfaces(34), Thin-Film Transistor Technologies(31)

Publications277 total

Quantification and improvement of doping uniformity on CVD grown 4H-SiC superjunction structures
Applied Physics Letters·2025
TCAD-Oriented Physical Modeling of Temperature-Dependent Inversion Layer Mobility in SiC MOSFETs
2025
Advantages of Backside Metal Contact Resistance on 4H-SiC Bonded Substrates for Power Devices
Materials science forum·2025Open Access
Superior Characteristics of Body Diode in DMOSFET Fabricated on 4H-SiC Bonded Substrate
Key engineering materials·2025Open Access
Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2025Open Access
High channel mobility at SiO2/GaN interface with different tilt angle trench sidewalls formed by wet etching treatment
APL Materials·2025Open Access
Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices
Materials Science in Semiconductor Processing·2025· 2 cited
All Ion-Implanted Vertical GaN Planar-Gate MOSFETs Fabricated on 4-Inch Substrates
2025· 1 cited
GaN/SiC-Based Polarization Superjunction Hybrid HEMTs (PSJ-hyHEMTs) on Vicinal Off-Angle SiC
2025
Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET
2025· 1 cited
Vertical Conduction of AlGaN‐on‐SiC Diodes with Buffer‐Layer‐Free Heterointerfaces
physica status solidi (a)·2025
Double-implanted 4H-SiC superjunction UMOSFET without bipolar degradation
Japanese Journal of Applied Physics·2025· 5 cited
Epitaxial Growth of 4h-Sic Layers on 4h-Sic Vicinal Off Angle Substrates for Gan/Sic Hybrid Devices
SSRN Electronic Journal·2025Open Access
(Invited) Improvement of Surface Morphology of Vicinal Off Angled 4H-SiC Epitaxial Wafer for GaN/SiC Hybrid Devices
ECS Meeting Abstracts·2024
Double-Implanted 4H-SiC Superjunction UMOSFET without Bipolar Degradation
2024
High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024Open Access
Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2024· 4 citedOpen Access
Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 1 citedOpen Access
Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024Open Access
Avalanche Stability Improvement by Boron Implanted GaN JTE Structures with Reduced Trap Density
2024· 1 cited
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Frequent Co-authors

Mitsuru Sometani(17), Hajime Okumura(16), Hiroshi Yano(14), Kenji Fukuda(13), Tetsuo Hatakeyama(11), Yoshiyuki Yonezawa(11), Mitsuo Okamoto(11), Manabu Takei(11), Dai Okamoto(10), Ryoji Kosugi(9), Yusuke Kobayashi(9), Junji Senzaki(8), Yasunori Tanaka(7), Hiroshi Kimura(7), Noriyuki Iwamuro(7), Tsunenobu Kimoto(6), Takahito Kojima(5), Ruito Aiba(5), Tomonori Mizushima(4), Kensuke Takenaka(4)