Yoshiyuki Yonezawa

National Institute of Advanced Industrial Science and Technology — Japan

Engineering · Physical Sciences

27h-index2.5kcitations206works7.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(113), Semiconductor materials and devices(68), Copper Interconnects and Reliability(26), Silicon and Solar Cell Technologies(19), Thin-Film Transistor Technologies(18)

Publications206 total

Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV
Materials Science in Semiconductor Processing·2024· 7 citedOpen Access
Development of an angle detection system for channeling implantation to the <i>c</i>-axis of SiC using birefringence phenomenon
Japanese Journal of Applied Physics·2023· 2 cited
10 kV SiC thyristor for High Voltage Pulsed Power Generators
2023· 1 cited
Direct visualization of kinetic reversibility of crystallization and dissolution behavior at solution growth interface of SiC in Si-Cr solvent
Surfaces and Interfaces·2021· 14 cited
Ultra‐High‐Voltage <scp>SiC</scp> Power Device
2021
Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth
physica status solidi (b)·2021· 6 cited
Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors
CrystEngComm·2021· 1 cited
Corrigendum: “Selection of ion species suited for channeled implantation to be used in multiepitaxial growth for SiC superjunction devices” [Jpn. J. Appl. Phys. <b>58</b> , 050905 (2019)]
Japanese Journal of Applied Physics·2020· 9 cited
ISPSD 2020 Awards [3 awards]
2020Open Access
Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes
Journal of Crystal Growth·2020· 7 cited
Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films
Materials Today Chemistry·2020· 5 cited
Low <i>V</i> <sub>F</sub> 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates
Japanese Journal of Applied Physics·2020· 4 cited
Evaluation of deep levels in 4H-SiC PiN structure with a p layer formed by ion implantation or epitaxial growth
The Japan Society of Applied Physics·2020
Low V<sub>on</sub> 17kV SiC IGBT assisted n-MOS Thyristor
2019· 4 cited
Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations
Applied Physics Letters·2019· 32 cited
Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
Materials science forum·2019· 3 cited
Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
Materials science forum·2019· 11 cited
Next-Generation High- to Ultra-High-Voltage SiC Power Devices
ICSCRM2019 Organizing Committee·2019
Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
Materials science forum·2019· 10 cited
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
Materials science forum·2019· 4 cited
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Frequent Co-authors

Hajime Okumura(26), Tomohisa Kato(15), Shinsuke Harada(12), Mitsuru Sometani(11), Tsunenobu Kimoto(11), M. Miyajima(11), Tetsuo Hatakeyama(10), Dai Okamoto(10), Kensuke Takenaka(9), Shinichiro Matsunaga(9), Masaki Miyazato(8), Akihiro Otsuki(8), Kenji Fukuda(8), Hiroyuki Fujisawa(8), Mina Ryo(7), Mitsuo Okamoto(7), Hiroshi Yano(6), Ryoji Kosugi(6), Tomonori Mizushima(6), Manabu Takei(6)