Qingchun Zhang

Southwest University of Science and Technology — China

Engineering · Physical Sciences

35h-index4.5kcitations304works6.02yr avg
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Research Topics

Semiconductor materials and devices(43), Silicon Carbide Semiconductor Technologies(40), Advancements in Semiconductor Devices and Circuit Design(25), Energetic Materials and Combustion(21), Thermal and Kinetic Analysis(19)

Publications304 total

Adsorption-Mediated Interfacial Engineering for Direct Regeneration of Spent LiFePO <sub>4</sub> Cathodes
ACS Nano·2026
Modification of β-lactoglobulin by glycation, high-pressure microfluidization and EGCG binding: Enhanced emulsifying and antioxidant properties
Food Research International·2025
Seasonal dynamics of phytoplankton shapes the annual variation of community in the coastal waters of Qinhuangdao, a high-frequency HAB area in North China
Journal of Oceanology and Limnology·2025
Iron Porphyrin-Mediated Electrolyte Chemistry for Advanced Lithium–Sulfur Batteries
Nano Letters·2025
Multi-modified β-Lg-stabilized fish oil emulsions: physicochemical stability, antioxidant capacity, and bioavailability in Caco-2 cells
Food Chemistry·2025
Electromechanical Coupling Dynamic Characteristics and Influences of Speed Control Parameters of a Dual-Inputs Geared Shaft System
Journal of Vibration Engineering & Technologies·2025
Genetic diversity of Aureococcus anophagefferens in the coastal waters of China and implications for intraspecific differentiation of environmental adaptability
Harmful Algae·2025
Dual-window spectrally engineered passive radiative coating for efficient year-round building thermal management
Energy·2025
Vanadyl Complex‐Mediated Molecular Engineering Enables Homogeneous Modulation of Lithium–Sulfur Chemistry
Small·2025· 1 cited
Predictive modeling and experimental investigation of material removal profiles in ultrasonic-assisted shear thickening polishing of 4H-SiC crystals
Tribology International·2025· 6 cited
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET
Nanomaterials·2025· 1 citedOpen Access
Vibration characteristic analysis of a two-stage spur gear transmission system with tooth crack and profile shifted
Journal of Sound and Vibration·2025· 1 cited
Research progress of shear-thickening polishing technology: A review
Precision Engineering·2025· 4 cited
Impact of electric field reconstruction on gate oxide degradation in 1200 V 4H–SiC MOSFET induced by heavy ion radiation
Journal of Physics D Applied Physics·2025
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors
Materials·2025· 6 citedOpen Access
Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers
Nanomaterials·2025· 3 citedOpen Access
Author response for "Amorphous FeP@Porous Carbon Nanofibers with Sterically Conductive Networks for Stable Potassium-ions Storage"
2025
High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures
Nanomaterials·2025· 10 citedOpen Access
Performance Comparison of Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Grown on 4H-SiC Substrates via Thermal and Plasma-Enhanced Atomic Layer Deposition Methods
ECS Journal of Solid State Science and Technology·2025· 5 cited
Amorphous FeP@porous carbon nanofibers with sterically conductive networks for stable potassium-ion storage
Nanoscale·2025
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Frequent Co-authors

Rufang Peng(12), Anant Agarwal(11), Chunxiang Zhu(7), Bo Jin(7), Bo Jin(7), Nan Wu(6), Meidong Lang(6), Robert Callanan(4), Mrinal K. Das(4), Sei‐Hyung Ryu(4), N. Balasubramanian(4), Zhaoyang Ye(4), Wen‐Song Tan(4), Shijin Chu(4), Zhicheng Guo(4), Zhiliang Guo(4), John W. Palmour(3), Yan Zhang(3), Yu Shang(3), D.S.H. Chan(2)