A. Scavennec

Alcatel Lucent (Germany) — Germany

Engineering · Physical Sciences

14h-index963citations108works0.02yr avg
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Research Topics

Photonic and Optical Devices(41), Semiconductor Quantum Structures and Devices(39), Semiconductor Lasers and Optical Devices(39), Advancements in Semiconductor Devices and Circuit Design(33), Semiconductor materials and devices(29)

Publications108 total

Transistors et circuits intégrés à hétérostructures (III-V)
Électronique·2011
Analysis of opto-microwave paths into a InP/InGaAs UTC-HPT
2011· 7 cited
Flip‐chip assembly design of an electro‐absorption modulated laser based on EM/circuit comodeling
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs
International Conference on Indium Phosphide and Related Materials·2011· 2 cited
Modélisation hybride pour l'intégration de composants Electro-Optique à 100 Gbit/s
HAL (Le Centre pour la Communication Scientifique Directe)·2011
Science and technology challenges in XXIst century optical communications
Comptes Rendus Physique·2011· 51 cited
A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
HAL (Le Centre pour la Communication Scientifique Directe)·2011· 4 cited
Flip-chip assembly design of an electro-absorption modulated laser based on EM/circuit comodeling
International Journal of RF and Microwave Computer-Aided Engineering·2010
Co-Packaged 107 Gb/s photoreceiver for direct detection comprising InP-based pinTWA and DEMUX
2010· 4 cited
InP HBT demultiplexing ICs for over 100 Gb/s optical transmission
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)·2010· 8 cited
400 GHz F<inf>MAX</inf> InP/GaAsSb HBT for millimeter-wave applications
2010· 3 cited
Experimental influence of the base load effect on SiGe/Si and InGaAs/InP HPTs
Dépôt institutionnel de l'Université libre de Bruxelles (Université Libre de Bruxelles)·2009· 5 cited
InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments
Bell Labs Technical Journal·2009· 4 cited
Hybrid co-packaged receiver module with pin-photodiode chip and DEMUX-IC for 107 Gb/s data rates
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)·2009· 6 cited
V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology
2009· 7 cited
Semiconductor technologies for higher frequencies
IEEE Microwave Magazine·2009· 26 cited
100 Gb/s Operation of an AlGaInAs Semi-Insulating Buried Heterojunction EML
2009· 31 cited
Mesures expérimentales des critères d'adaptation de HPT SiGe/Si et InGaAs/InP
Dépôt institutionnel de l'Université libre de Bruxelles (Université Libre de Bruxelles)·2009
Distribution optique de signaux sensibles dans une antenne active et intégration opto RF
Dépôt institutionnel de l'Université libre de Bruxelles (Université Libre de Bruxelles)·2009
107 Gbit/s Demultiplexing Photoreceivers Comprising pin- and pinTWA Frontends
2009· 3 cited
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Frequent Co-authors

M. Riet(17), J. Godin(14), A. Konczykowska(7), Virginie Nodjiadjim(6), P. Berdaguer(6), G. Post(6), L. Giraudet(6), F. Jorge(5), D. Ankri(4), Jean-Yves Dupuy(3), F. Héliot(3), P. Dimitriou(3), Hassan Maher(3), J. Décobert(3), A. Falcou(3), J.L. Benchimol(3), G.G. Mekonnen(3), D. Pech(3), Colja Schubert(3), J. P. Praseuth(3)