J. Boucart

Engineering · Physical Sciences

13h-index528citations44works3.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(39), Photonic and Optical Devices(32), Semiconductor Quantum Structures and Devices(16), Molecular Junctions and Nanostructures(11), Solid State Laser Technologies(4)

Publications44 total

High-brightness semiconductor laser diodes for LIDAR application
2025· 3 cited
Multi-junction lasers for LiDAR applications
2023· 7 cited
High power laser diodes at 14xx nm wavelength range for industrial and medical applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 5 cited
High power single-mode DFB laser diodes for 10xx nm spectral range
2012· 3 cited
Laser diodes with distributed feedback for application as subnanosecond fiber laser seeder
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2012· 4 cited
High power single mode semiconductor laser
2011· 1 cited
High performance single-mode 1060 nm DFB laser diodes
2011· 3 cited
Low-cost high-reliability 830nm single mode lasers for consumer electronics and CtP applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 1 cited
Initial conditions influence the characteristics of ballistic contractions in the ankle dorsiflexors
European Journal of Applied Physiology·2010· 5 cited
Eye safe high power laser diode in the 1410-1550nm range
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 6 cited
Design and realization of high power semiconductor lasers
2009· 1 cited
Recent developments for BAR and BASE: setting the trends
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 11 cited
Low temperature single electron characteristics in gate-all-around MOSFETs
Proceedings of the European Solid State Device Research Conference·2006· 3 citedOpen Access
3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications
IEEE Photonics Technology Letters·2006· 16 citedOpen Access
Coulomb blockade in gate-all-around silicon nanowire MOSFETs
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2006Open Access
VCSELs emitting in the 1310-nm waveband for novel optical communication applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 9 cited
1.55-<tex>$mu$</tex>m Optically Pumped Wafer-Fused Tunable VCSELs With 32-nm Tuning Range
IEEE Photonics Technology Letters·2004· 17 citedOpen Access
1.5mW single-mode output power at 90/spl deg/C from 1530nm VCSELs
Conference on Lasers and Electro-Optics·2004
1.5mW single-mode output power at 90°C from 1530nm VCSELs
Conference on Lasers and Electro-Optics·2004
Long Wavelength-Tunable VCSELs With Optimized MEMS Bridge Tuning Structure
IEEE Photonics Technology Letters·2004· 35 cited
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Frequent Co-authors

J. Jacquet(15), F. Gaborit(11), C. Starck(10), A. Syrbu(10), C.-A. Berseth(10), A. Rudra(10), A. Plais(9), Leon J. Goldstein(9), C. Fortin(9), N. Lichtenstein(9), Peter Kner(8), R.F. Nabiev(8), W. Yuen(8), E. Kapon(8), N. Bouché(7), E. Derouin(7), G. Suruceanu(5), A. Caliman(5), A. Mircéa(5), A. Mereuta(5)