C.-A. Berseth

Engineering · Physical Sciences

12h-index459citations43works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(38), Photonic and Optical Devices(35), Semiconductor Quantum Structures and Devices(26), Molecular Junctions and Nanostructures(5), Advanced Fiber Optic Sensors(2)

Publications43 total

InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 µm VCSELs
Università del Salento·2015Open Access
High power single mode VCSELs emitting at 1320nm wavelength
2007 Conference on Lasers and Electro-Optics (CLEO)·2007
Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 <formula formulatype="inline"><tex>$^{\circ}$</tex></formula>C
IEEE Photonics Technology Letters·2007· 46 citedOpen Access
3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications
IEEE Photonics Technology Letters·2006· 16 citedOpen Access
Room-Temperature Pulsed Operation of 1.52 μm Vertical Cavity Lasers Obtained by Localised Fusion
2005· 1 cited
High-performance single-mode VCSELs in the 1310-nm waveband
IEEE Photonics Technology Letters·2005· 61 citedOpen Access
VCSELs emitting in the 1310-nm waveband for novel optical communication applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 9 cited
1325 nm VCSELs emitting 1.2 mW single mode output in the 20-80°C temperature range
OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005.·2005· 1 cited
1.5μm VCSEL structure optimization for high-power and high-temperature operation
Journal of Crystal Growth·2004· 21 citedOpen Access
1.55-<tex>$mu$</tex>m Optically Pumped Wafer-Fused Tunable VCSELs With 32-nm Tuning Range
IEEE Photonics Technology Letters·2004· 17 citedOpen Access
1.5mW single-mode output power at 90/spl deg/C from 1530nm VCSELs
Conference on Lasers and Electro-Optics·2004
1.5mW single-mode output power at 90°C from 1530nm VCSELs
Conference on Lasers and Electro-Optics·2004
1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs
IEEE Photonics Technology Letters·2004· 71 citedOpen Access
1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range
Electronics Letters·2004· 16 citedOpen Access
VCSELs emitting in the 1550 nm waveband with 0.6 mW single mode output in 20-80/spl deg/C temperature range
Optical Fiber Communication Conference·2004· 1 cited
2 mW single mode operation of 1.55 μm InAlGaAs/InP-AlGaAs/GaAs wafer fused tunable VCSELs optically pumped with 980 nm lasers
2003
Properties of photonic lattices created using arrays of coupled vertical cavity surface emitting lasers
2003
Room-temperature pulsed operation of 1.5 μm triple fused vertical cavity surface emitting lasers with in-situ built-in lateral current confinement
2002
Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE
2002Open Access
InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 μm
2002Open Access
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Frequent Co-authors

A. Rudra(32), A. Syrbu(30), E. Kapon(25), A. Mereuta(17), G. Suruceanu(17), A. Mircéa(14), A. Caliman(14), E. Kapon(14), V. Iakovlev(11), V P Iakovlev(10), J. Boucart(10), J. Behrend(8), V. Iakovlev(7), O. Dehaese(7), J.‐F. Carlin(4), J.‐F. Carlin(4), M. Moser(4), J. Jacquet(4), I. Sagnes(4), E. Deichsel(4)