T. Kauerauf

GlobalFoundries (United States) — United States

Engineering · Physical Sciences

28h-index2.6kcitations124works0.02yr avg
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Research Topics

Semiconductor materials and devices(118), Advancements in Semiconductor Devices and Circuit Design(93), Integrated Circuits and Semiconductor Failure Analysis(49), Ferroelectric and Negative Capacitance Devices(41), Copper Interconnects and Reliability(15)

Publications124 total

Development of High-Density Metal-Insulator-Metal Capacitors with Top and Side Contacts
2023· 2 cited
Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application
2017
Investigation of hot carrier degradation in bulk FinFET
2017· 31 cited
Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB
2016· 23 cited
Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB
IEEE Conference Proceedings·2016
SRB上のSiGe pMOSFETの負バイアス温度不安定性(NBTI)に及ぼすアクセプタ様トラップ効果【Powered by NICT】
IEEE Conference Proceedings·2016
BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities
2014· 41 cited
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
2014· 41 cited
Low-frequency noise assessment of border traps in Al<sub>2</sub>O<sub>3</sub> capped DRAM peripheral MOSFETs
Semiconductor Science and Technology·2014· 15 cited
A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond
IEEE Transactions on Electron Devices·2014· 21 cited
Towards the understanding of intrinsic degradation and breakdown mechanisms of a SiOCH low-k dielectric
2014· 12 cited
Suitability of high-k gate oxides for III&amp;#x2013;V devices: A PBTI study in In&lt;inf&gt;0.53&lt;/inf&gt;Ga&lt;inf&gt;0.47&lt;/inf&gt;As devices with Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt;
2014· 32 cited
Análisis termo-eléctrico de elementos finitos (EF) en vías de cobre nanométricas bajo tensión de alta fluencia
ACI Avances en Ciencias e Ingenierías·2013Open Access
Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs
IEEE Transactions on Electron Devices·2013· 88 cited
Improved Channel Hot-Carrier Reliability in $p$-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process
IEEE Transactions on Device and Materials Reliability·2013· 6 cited
Impact of Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; position on performances and reliability in high-k metal gated DRAM periphery transistors
2013· 10 cited
Negative Bias Temperature Instability in p-FinFETs With 45$^{\circ}$ Substrate Rotation
IEEE Electron Device Letters·2013· 13 cited
Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: Challenges and solutions
2013· 8 cited
Improved NBTI reliability with sub-1-nanometer EOT ZrO<sub>2</sub> gate dielectric compared with HfO<sub>2</sub>
IEEE Electron Device Letters·2013· 4 cited
Reliability of MOL local interconnects
2013· 35 cited
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Frequent Co-authors

G. Groeseneken(35), R. Degraeve(30), B. Kaczer(18), Ph. Roussel(10), L. Pantisano(9), Philippe Roussel(8), J. Franco(8), Lars‐Åke Ragnarsson(8), E. Cartier(7), Stefan De Gendt(7), A. Kerber(6), M. Aoulaiche(6), H.E. Maes(5), E. Amat(5), R. Rodrı́guez(5), M. Nafrı́a(5), X. Aymerich(5), M. Toledano-Luque(5), Nadine Collaert(5), K. L. Pey(5)