L. Pantisano

Intel (United States) — United States

Engineering · Physical Sciences

34h-index4.0kcitations221works1.02yr avg
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Research Topics

Semiconductor materials and devices(205), Advancements in Semiconductor Devices and Circuit Design(148), Integrated Circuits and Semiconductor Failure Analysis(95), Ferroelectric and Negative Capacitance Devices(48), Advanced Memory and Neural Computing(27)

Publications221 total

Microprocessor Switching Activity Translation to AC Gate Oxide Wearout: Does it Matter? INTEL4 Meteor Lake Chip Activity Case Study
2025· 1 cited
FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications
2020· 16 cited
Self-heating characterization and its applications in technology development
2020· 2 cited
High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs
2019· 13 cited
Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability
IEEE Transactions on Device and Materials Reliability·2019· 19 cited
Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation
2018· 8 cited
Study of Lanthanum Diffusion in HfO2-Based High-k Gate Stack
ECS Meeting Abstracts·2018
Study of Lanthanum Diffusion in HfO<sub>2</sub>-Based High-k Gate Stack
ECS Transactions·2018· 7 cited
Understanding gate metal work function (mWF) impact on device reliability — A holistic approach
2018· 11 cited
Interaction of work function tuning and negative bias temperature instability for future nodes
Microelectronic Engineering·2017
W versus Co–Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes
Japanese Journal of Applied Physics·2013· 1 cited
Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
Microelectronic Engineering·2013· 9 cited
Reliability insights into low frequency noise in high-mobility transistors
2013
UPDATE SCHWARZWALD - Sommeruni als Impulsgeber für den Ländlichen Raum
Repository KITopen (Karlsruhe Institute of Technology)·2013Open Access
Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs
2012· 13 cited
Insights in low frequency noise of advanced and high-mobility channel transistors
2012· 3 cited
W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes
2012
Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel
2012
Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
2012
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
2012· 2 cited
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Frequent Co-authors

G. Groeseneken(23), R. Degraeve(17), A. Kerber(15), E. Cartier(13), Stefan De Gendt(12), Marc Heyns(12), T. Schram(9), T. Kauerauf(7), Udo Schwalke(6), L. Goux(6), M. Jurczak(6), V. V. Afanas’ev(6), H.E. Maes(5), B. Govoreanu(5), J. A. Kittl(5), D. J. Wouters(4), Eddy Simoen(4), Edward Young(4), M. Rosmeulen(4), Jérôme Mitard(4)