Udo Schwalke

Technical University of Darmstadt — Germany

Engineering · Physical Sciences

20h-index1.7kcitations226works0.02yr avg
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Research Topics

Semiconductor materials and devices(118), Advancements in Semiconductor Devices and Circuit Design(91), Integrated Circuits and Semiconductor Failure Analysis(48), Graphene research and applications(45), Nanowire Synthesis and Applications(38)

Publications226 total

Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications
ACS Omega·2021· 9 citedOpen Access
Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications
2020· 7 cited
From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI
2019· 6 cited
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing
2019
The transport and optical sensing properties of blue phosphorene: A first-principles study
2019· 5 cited
Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019
The transport and optical sensing properties of Blue Phosphorene: A First-Principles Study
IEEE Conference Proceedings·2019
Transfer-free fabrication of nanocrystalline graphene field-effect transistor gas sensor arrays
TUbilio (Technical University of Darmstadt)·2019
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors
ECS Transactions·2018· 1 cited
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors
ECS Meeting Abstracts·2018
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors
ECS Meeting Abstracts·2018
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors
ECS Transactions·2018· 3 cited
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection
2018
Ammonia Sensing Using Transfer-Free in Situ CCVD Grown Nanocrystalline Graphene Field Effect Transistors
ECS Meeting Abstracts·2018
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS
2018· 5 cited
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices
2018
Direct fabrication of nanocrystalline graphene field effect transistors for gas detection
TUbilio (Technical University of Darmstadt)·2018
Transfer-free mass-fabrication of graphene field-effect gas sensors
TUbilio (Technical University of Darmstadt)·2018
Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection
ECS Journal of Solid State Science and Technology·2018· 10 citedOpen Access
On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices
IEEE Transactions on Electron Devices·2017· 34 cited
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Frequent Co-authors

Frank Wessely(13), Tillmann Krauss(9), A. Kerber(7), E. Cartier(7), G. Groeseneken(7), L. Pantisano(6), R. Degraeve(6), Yordan Stefanov(6), H.E. Maes(5), Pia Juliane Wessely(5), M. Kerber(4), J. E. Parmeter(4), Emrah Birinci(4), Bernadette Riedinger(4), Lorraine Rispal(4), T. Kauerauf(3), W. H. Weinberg(3), Max C. Lemme(3), Ralf Endres(3), M. Rosmeulen(2)