Daehwan Jung

Korea Institute of Science and Technology — South Korea

Physics and Astronomy · Physical Sciences

35h-index4.0kcitations171works2.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(118), Photonic and Optical Devices(95), Semiconductor Lasers and Optical Devices(80), Nanowire Synthesis and Applications(21), Advanced Semiconductor Detectors and Materials(20)

Publications168 total

Band-edge alignment in ultra-narrow InAs1-xSbx photocathodes enabling selective solar-driven CO2-to-liquid conversion
Journal of CO2 Utilization·2026Open Access
Enhanced short-circuit current density in epitaxial InGaP/GaAs/Si triple-junction solar cells enabled by wide bandgap n-AlGaAs buffers
Solar Energy Materials and Solar Cells·2025
High Tunneling Current and Thermally Stable AlGaAs Tunnel Junctions Enabled by Hybrid Delta Doping for III–V/Si Epitaxial Tandem Cells
ACS Applied Energy Materials·2025
Multifunctional metamorphic III-V distributed Bragg reflectors grown on Si substrate for resonant cavity surface emitting devices
PhotoniX·2025· 3 citedOpen Access
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Laser & Photonics Review·2025· 6 citedOpen Access
Growth of InxGa1-xSb linearly graded buffers on GaSb substrate for ultra-low bandgap 0.1 eV InAsSb layer
Applied Surface Science·2025Open Access
p‐Graphene/Quantum Dot/n‐GaAs Mixed‐Dimensional Heterostructure Junction for Ultrathin Light‐Emitting‐Diodes
Advanced Materials Interfaces·2025Open Access
High Detectivity Dual‐Band Infrared Photodetectors with Dislocation‐Assisted Photoconductive Gain via Hetero‐Epitaxial Growth
Advanced Functional Materials·2025· 8 citedOpen Access
Band-edge alignment in InAs1-xSbx photocathodes enabling selective solar-driven CO2-to-liquid conversion
SSRN Electronic Journal·2025Open Access
Enhanced short-circuit current density in epitaxial InGaP/GaAs/Si triple-junction solar cells enabled by wide bandgap n-AlGaAs buffers
SSRN Electronic Journal·2025Open Access
Correction to “Improving the Open-Circuit Voltage of III–V Layer-Filtered Si Subcells for Monolithic III–V/Si Tandem Solar Cells”
ACS Applied Energy Materials·2024
Correction to “1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells”
ACS Applied Optical Materials·2024
Engineering Photocarrier Redistributions in Graphene/III‐V Quantum Dot Mixed‐Dimensional Heterostructures for Radiative Recombination Enhancements
Small·2024· 1 citedOpen Access
Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells
Solar RRL·2024· 8 citedOpen Access
Improving the Open-Circuit Voltage of III–V Layer-Filtered Si Subcells for Monolithic III–V/Si Tandem Solar Cells
ACS Applied Energy Materials·2024· 4 cited
Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate
ACS Applied Materials & Interfaces·2024· 3 cited
1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells
ACS Applied Optical Materials·2024· 2 cited
InAs quantum dash lasers for 2-μm photonics
2024· 1 cited
Optimization of 1.65 eV Al0.18Ga0.82As Tunnel Junctions for Monolithic III-V/Si Solar Cells
2024
Gradual degradation in InAs quantum dot lasers on Si and GaAs
Nanoscale·2024· 4 citedOpen Access
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Frequent Co-authors

John E. Bowers(36), Justin Norman(29), A. C. Gossard(21), Minjoo Larry Lee(15), Yating Wan(13), Zeyu Zhang(10), Chen Shang(10), Robert W. Herrick(7), Songtao Liu(6), Seth R. Bank(5), Jianan Duan(5), Heming Huang(5), Esther M. John(4), Qiang Li(4), Alan Y. Liu(4), Kei May Lau(4), Kunal Mukherjee(4), Frédéric Grillot(4), Joseph Faucher(4), Mario Dumont(4)