Satheesh Kuppurao

Applied Materials (Germany) — Germany

Engineering · Physical Sciences

12h-index626citations47works0.02yr avg
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Research Topics

Semiconductor materials and devices(22), Advancements in Semiconductor Devices and Circuit Design(15), Silicon and Solar Cell Technologies(13), Semiconductor materials and interfaces(10), Thin-Film Transistor Technologies(7)

Publications47 total

Enabling Next Generation CMOS by Novel EOT Scaling Module
Symposium on VLSI Technology·2021· 1 cited
The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs
2017· 28 cited
High-Mobility CVD-Grown Ge/Strained Ge<sub>0.9</sub>Sn<sub>0.1</sub>/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
IEEE Transactions on Electron Devices·2017· 32 cited
Record high mobility (428cm<sup>2</sup>/V-s) of CVD-grown Ge/strained Ge&lt;inf&gt;0.91&lt;/inf&gt;Sn&lt;inf&gt;0.09&lt;/inf&gt;/Ge quantum well p-MOSFETs
2016· 12 cited
Strained Ge&lt;inf&gt;0.91&lt;/inf&gt;Sn&lt;inf&gt;0.09&lt;/inf&gt; Quantum Well p-MOSFETs
2016
Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications
Symposium on VLSI Technology·2013· 2 cited
High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications
ECS Transactions·2013· 24 cited
Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence
IEEE Transactions on Electron Devices·2012· 6 cited
Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
IEEE Electron Device Letters·2012· 91 cited
A Two Terminal Vertical Selector Device for Bipolar RRAM
ECS Meeting Abstracts·2012· 1 citedOpen Access
High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications
ECS Meeting Abstracts·2012· 1 citedOpen Access
Segmented-channel Si&lt;inf&gt;1&amp;#x2212;x&lt;/inf&gt;Ge&lt;inf&gt;x&lt;/inf&gt;/Si pMOSFET for improved I&lt;inf&gt;ON&lt;/inf&gt; and reduced variability
2012
Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction
2012· 1 cited
Epitaxial Si punch-through based selector for bipolar RRAM
2012· 12 cited
Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance
2012
Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability
2012
Epitaxial Growth on High Aspect Ratio Structures
ECS Transactions·2010
Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si(001) Substrate
ECS Transactions·2010· 1 cited
Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films Beyond a Critical Thickness on Si(001) Substrate
ECS Meeting Abstracts·2010Open Access
Epitaxial Growth on High Aspect Ratio Structures
ECS Meeting Abstracts·2010Open Access
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Frequent Co-authors

Yihwan Kim(20), Saurabh Chopra(16), Zhiyuan Ye(11), Jeffrey J. Derby(9), Chorng‐Ping Chang(7), Ali Zojaji(7), Bingxi Wood(7), Vinh Cao Trần(7), James C. Sturm(5), Byron Ho(5), Tsu‐Jae King Liu(5), Errol Sanchez(5), S. Srinivasan(4), Keith Chung(4), Yi‐Chiau Huang(4), Hua Chung(4), Schubert S. Chu(4), E. Sánchez(4), Nuo Xu(4), Bich-Yen Nguyen(4)