Chorng‐Ping Chang

Engineering · Physical Sciences

10h-index253citations26works0.02yr avg
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Research Topics

Semiconductor materials and devices(20), Advancements in Semiconductor Devices and Circuit Design(13), Integrated Circuits and Semiconductor Failure Analysis(5), Photonic and Optical Devices(4), Copper Interconnects and Reliability(4)

Publications26 total

Materials to Systems in Semiconductor Manufacturing and Beyond
Symposium on VLSI Technology·2021· 1 cited
A Vision toward Ultimate Optical Out‐Coupling for Organic Light‐Emitting Diode Displays: 3D Pixel Configuration
Advanced Science·2018· 31 citedOpen Access
High-Mobility CVD-Grown Ge/Strained Ge<sub>0.9</sub>Sn<sub>0.1</sub>/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
IEEE Transactions on Electron Devices·2017· 32 cited
Record high mobility (428cm<sup>2</sup>/V-s) of CVD-grown Ge/strained Ge&lt;inf&gt;0.91&lt;/inf&gt;Sn&lt;inf&gt;0.09&lt;/inf&gt;/Ge quantum well p-MOSFETs
2016· 12 cited
Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
Applied Physics Letters·2016· 11 cited
Strained Ge&lt;inf&gt;0.91&lt;/inf&gt;Sn&lt;inf&gt;0.09&lt;/inf&gt; Quantum Well p-MOSFETs
2016
More Moore landscape for system readiness - ITRS2.0 requirements
2014· 6 cited
In-situ non-disruptive cleaning of Ge(100) using H2O2(g) and atomic hydrogen
Surface Science·2014· 12 cited
The effect of interfacial oxide and high-&amp;#x03BA; thickness on NMOS V&lt;inf&gt;th&lt;/inf&gt; shift from plasma-induced damage
2014· 1 cited
Threshold voltage tuning by metal gate work function modulation for 10 nm CMOS integration and beyond
2014· 15 cited
Fin Doping By Hot Implant for 14nm Finfet Technology and Beyond
ECS Meeting Abstracts·2013
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond
ECS Transactions·2013· 28 cited
Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications
Symposium on VLSI Technology·2013· 2 cited
Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence
IEEE Transactions on Electron Devices·2012· 6 cited
Segmented-channel Si&lt;inf&gt;1&amp;#x2212;x&lt;/inf&gt;Ge&lt;inf&gt;x&lt;/inf&gt;/Si pMOSFET for improved I&lt;inf&gt;ON&lt;/inf&gt; and reduced variability
2012
Replacement metal gate extendible to 11 nm technology
2012· 2 cited
Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability
2012
3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration
ECS Transactions·2011· 4 cited
3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration
ECS Meeting Abstracts·2011Open Access
High-k/metal gate stacks in gate first and replacement gate schemes
2010· 17 cited
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Frequent Co-authors

Bingxi Wood(8), Osbert Chan(8), Satheesh Kuppurao(7), Miao Jin(7), Man-Ping Cai(5), Motoya Okazaki(5), Chi‐Nung Ni(5), Naomi Yoshida(5), Raymond Hung(5), C. W. Liu(4), Yi‐Chiau Huang(4), Hua Chung(4), Adam Brand(4), Srinivas Gandikota(4), Steven Hung(4), Atif Noori(4), Shiyu Sun(4), Byron Ho(4), Nuo Xu(4), Vinh Cao Trần(4)