Felix Nippert

Technische Universität Berlin — Germany

Physics and Astronomy · Physical Sciences

14h-index618citations38works5.52yr avg
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Research Topics

GaN-based semiconductor devices and materials(27), Semiconductor Quantum Structures and Devices(18), Ga2O3 and related materials(14), ZnO doping and properties(9), Semiconductor materials and devices(8)

Publications38 total

Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga <sub>2</sub> O <sub>3</sub>
Advanced Functional Materials·2025· 1 citedOpen Access
Publisher's Note: “Anisotropy of optical transitions in <b> <i>β</i> </b>-Ga2O3 investigated by polarized photoluminescence excitation spectroscopy” [Appl. Phys. Lett. <b>124</b>, 152102 (2024)]
Applied Physics Letters·2024Open Access
Multimode Emission in GaN Microdisk Lasers
Laser & Photonics Review·2024· 8 citedOpen Access
Anisotropy of optical transitions in <b> <i>β</i>-</b>Ga2O3 investigated by polarized photoluminescence excitation spectroscopy
Applied Physics Letters·2024· 5 citedOpen Access
Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions
physica status solidi (a)·2024· 8 citedOpen Access
Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Applied Physics Letters·2024· 11 citedOpen Access
Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
arXiv (Cornell University)·2023Open Access
Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices
Discover Nano·2023· 2 citedOpen Access
Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering
Journal of Applied Physics·2023· 2 cited
Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires
Nanoscale·2023· 2 citedOpen Access
Tackling Disorder in γ‐Ga<sub>2</sub>O<sub>3</sub>
Advanced Materials·2022· 52 citedOpen Access
Tackling Disorder in $γ$-Ga$_2$O$_3$
arXiv (Cornell University)·2022Open Access
Advances in ultraviolet-emitting vertical-cavity surface-emitting lasers
2021· 1 cited
A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
ACS Photonics·2020· 42 citedOpen Access
Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop
Applied Physics Letters·2020· 14 cited
Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition
physica status solidi (b)·2020· 17 citedOpen Access
Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization
physica status solidi (b)·2020· 12 citedOpen Access
Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates
Journal of Applied Physics·2020· 16 cited
Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
Journal of Applied Physics·2019· 23 cited
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
Applied Physics Letters·2018· 69 cited
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Frequent Co-authors

A. Hoffmann(22), Markus R. Wagner(20), Gordon Callsen(12), Thomas Kure(10), Hans‐Jürgen Lugauer(10), Christian Nenstiel(7), Martin Straßburg(6), Marc P. Hoffmann(6), S. Yu. Karpov(5), Benjamin M. Janzen(5), M. Albrecht(5), Christian Frankerl(5), Christian Brandl(5), R. Zeisel(5), Bastian Galler(4), Michael Kneissl(4), Matthew Davies(4), R. Goldhahn(3), Martin Feneberg(3), Joel B. Varley(3)