Markus R. Wagner

Forschungsverbund Berlin — Germany

Materials Science · Physical Sciences

40h-index5.7kcitations192works3.42yr avg
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Research Topics

ZnO doping and properties(64), Ga2O3 and related materials(44), GaN-based semiconductor devices and materials(42), Semiconductor Quantum Structures and Devices(40), Thermal properties of materials(24)

Publications192 total

Lattice Dynamics of Rutile Germanium Dioxide (r‐GeO <sub>2</sub> )
Advanced Electronic Materials·2026Open Access
Phonons in Single‐Domain κ‐Ga <sub>2</sub> O <sub>3</sub> Studied by Polarization Angle‐Resolved Raman Scattering
Advanced Electronic Materials·2026· 1 citedOpen Access
Spectral Tuning of Hyperbolic Shear Polaritons in Monoclinic Gallium Oxide via Isotopic Substitution
Advanced Materials·2026Open Access
Spectral tuning of hyperbolic shear polaritons in monoclinic gallium oxide via isotopic substitution - Data for figures
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Spectral tuning of hyperbolic shear polaritons in monoclinic gallium oxide via isotopic substitution - Data for figures
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
A Programmable Semiconductor Containing Active Molecular Photoswitches Located in the Crystal's Volume Phase
Advanced Functional Materials·2025Open Access
Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga <sub>2</sub> O <sub>3</sub>
Advanced Functional Materials·2025· 1 citedOpen Access
Effect of lithium diffusion into Ga2O3 thin films
Applied Surface Science·2025· 1 citedOpen Access
Effect of Lithium Diffusion into Ga2o3 Thin Films
SSRN Electronic Journal·2025Open Access
Nucleation and Faceting in (001) r-GeO2 Heteroepitaxy on r-TiO2 by Metalorganic Vapor Phase Epitaxy
SSRN Electronic Journal·2025Open Access
Publisher's Note: “Anisotropy of optical transitions in <b> <i>β</i> </b>-Ga2O3 investigated by polarized photoluminescence excitation spectroscopy” [Appl. Phys. Lett. <b>124</b>, 152102 (2024)]
Applied Physics Letters·2024Open Access
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Materials Today Physics·2024· 19 citedOpen Access
Multimode Emission in GaN Microdisk Lasers
Laser & Photonics Review·2024· 8 citedOpen Access
Anisotropy of optical transitions in <b> <i>β</i>-</b>Ga2O3 investigated by polarized photoluminescence excitation spectroscopy
Applied Physics Letters·2024· 5 citedOpen Access
Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions
physica status solidi (a)·2024· 8 citedOpen Access
Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Applied Physics Letters·2024· 11 citedOpen Access
Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
arXiv (Cornell University)·2023Open Access
<i>In situ</i> study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
APL Materials·2023· 12 citedOpen Access
Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices
Discover Nano·2023· 2 citedOpen Access
Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering
Journal of Applied Physics·2023· 2 cited
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Frequent Co-authors

A. Hoffmann(28), J. S. Reparaz(26), Gordon Callsen(12), Yan Pennec(11), Ronny Kirste(10), Bartłomiej Graczykowski(8), Sebastian Polarz(7), Christian Nenstiel(6), F. Alzina(5), Sebastian Eisermann(5), Marianna Sledzinska(5), Thomas Kure(5), Bruno Meyer(5), Jouni Ahopelto(4), Emigdio Chávez‐Ángel(4), Matthew R. Phillips(4), Bertrand Meyer(4), Jordi Gomis‐Brescó(4), Joachim Sann(4), Felix Nippert(4)