C. Caneau

Core Competence — United States

Physics and Astronomy · Physical Sciences

13h-index1.6kcitations51works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(30), Semiconductor Lasers and Optical Devices(21), Photonic and Optical Devices(18), Semiconductor materials and devices(8), Advancements in Semiconductor Devices and Circuit Design(8)

Publications51 total

High-performance AlInP/AlImAs/GaInAs HEMT with a partially-doped graded pseudomorphic channel
2005
GaAs Fets And Novel Heterloepitaxial Quaternary Lasers Grown On InP Substrates By Organometallic Chemical Vapor Deposition
2005
Ultra-high Spontaneous Emission Quantum Efficiency, 99.7% Internally And 72% Externally, From AlGaAs/GaAs/AlGaAs Double Heterostructures
2005· 9 cited
[招待論文]InP基板上長波長帯面発光レーザ(半導体レーザ及び光パッシブコンポネント, 及び一般)
電子情報通信学会技術研究報告. OPE, 光エレクトロニクス·2003
High-yield processing and single-mode operation of passive antiguide region vertical-cavity lasers
IEEE Journal of Selected Topics in Quantum Electronics·1997· 14 cited
Fabrication of InP-based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etching
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1996· 7 cited
Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1996· 5 cited
High-speed Ga <sub>0.51</sub> In <sub>0.49</sub> P/GaAsheterojunction phototransistors
Electronics Letters·1995· 6 cited
Single-mode, passive antiguide vertical cavity surface emitting laser
IEEE Journal of Selected Topics in Quantum Electronics·1995· 58 cited
Strain-compensated type-II asymmetric quantum wells for wavelength converter applications
Quantum Electronics and Laser Science Conference·1995
Epitaxial lift-off GaAs HEMT's
IEEE Transactions on Electron Devices·1995· 21 cited
Ti doping of InP and GaInAs using TiCl4
Journal of Crystal Growth·1994· 1 cited
Potentially high-performance carbon-doped GaInP/GaAsheterojunction bipolar transistors with differentcompositional base gradings
Electronics Letters·1994· 5 cited
GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
IEEE Electron Device Letters·1994· 38 cited
Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers
Applied Physics Letters·1993· 10 cited
30% external quantum efficiency from surface textured, thin-film light-emitting diodes
Applied Physics Letters·1993· 640 cited
Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
Electronics Letters·1993· 23 cited
Low threshold buried heterostructure vertical cavity surface emitting laser
Applied Physics Letters·1993· 45 cited
Fe and Ti implants in In0.52Al0.48As
Journal of Electronic Materials·1993· 7 cited
MOCVD-grown InAlAs/InGaAs HEMTs with <i>f</i> <sub>T</sub> = 200 GHz
Electronics Letters·1993· 1 cited
page 1 of 3Next →

Frequent Co-authors

M.A. Koza(9), R. Bhat(9), Y.A. Wu(7), K.B. Chough(7), Chung-En Zah(6), Jong‐In Song(6), I. Schnitzer(5), Eli Yablonovitch(5), Axel Scherer(5), T. J. Gmitter(5), F. Favire(5), D. M. Hwang(5), C.J. Chang-Hasnain(5), Wonbin Hong(5), Mulpuri V. Rao(5), B. Pathak(4), Constance J. Chang-Hasnain(4), I. Adesida(4), R. Bhat(4), G.S. Li(3)