K.B. Chough

Physics and Astronomy · Physical Sciences

10h-index252citations30works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(24), Semiconductor materials and devices(15), Radio Frequency Integrated Circuit Design(14), Advancements in Semiconductor Devices and Circuit Design(13), GaN-based semiconductor devices and materials(6)

Publications30 total

Carbon-doped base InP/InGaAs HBTs with f/sub T/ = 200 GHz
2005· 7 cited
High-performance AlInP/AlImAs/GaInAs HEMT with a partially-doped graded pseudomorphic channel
2005
OMCVD grown AlInAs/GaInAs HEMT's with AlGaInP schottky layer
2005· 5 cited
Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors
2002· 2 cited
High-performance InP-based HEMT's with a graded pseudomorphic channel
2002· 2 cited
A f/sub T/=175 GHz carbon-doped base InP/InGaAs HBT
2002· 7 cited
High-performance InP-based HEMT's with a graded pseudomorphic channel
2002· 2 cited
InP based carbon-doped base HBT technology: its recent advances and circuit applications
2002· 12 cited
Potentially high-performance carbon-doped GaInP/GaAsheterojunction bipolar transistors with differentcompositional base gradings
Electronics Letters·1994· 5 cited
Graded pseudomorphic channel AlInP/AlInAs/GaInAsHEMTs with high channel breakdown voltage
Electronics Letters·1994· 7 cited
Millimetre-wave InP/InGaAs heterojunction bipolartransistors with a subpicosecond extrinsic delay time
Electronics Letters·1994· 13 cited
Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
IEEE Electron Device Letters·1994· 34 cited
Investigation of Al<i>x</i>Ga<i>y</i>In1−<i>x</i>−<i>y</i>P as a Schottky layer of AlInAs/GaInAs high electron mobility transistors
Applied Physics Letters·1994· 9 cited
Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As graded channel pseudomorphic HEMT's with high channel-breakdown voltage
IEEE Electron Device Letters·1994· 32 cited
Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
Electronics Letters·1993· 23 cited
Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy
Electronics Letters·1993· 5 cited
MOCVD-grown InAlAs/InGaAs HEMTs with <i>f</i> <sub>T</sub> = 200 GHz
Electronics Letters·1993· 1 cited
Effect of strain on microwave noise characteristics in In <sub>0.52</sub> Al <sub>0.48</sub> As/In <sub>x</sub> Ga <sub>1−x</sub> As (0.53 ≤ <i>x</i> ≤ 0.80)
Electronics Letters·1993· 1 cited
Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors
Electronics Letters·1993· 11 cited
High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy
Electronics Letters·1993· 12 cited
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Frequent Co-authors

Wonbin Hong(13), Jong‐In Song(11), Jianan Song(11), C. J. Palmstrøm(8), B. P. Van der Gaag(7), C. Caneau(7), B.W.-P. Hong(6), C. Caneau(6), J. R. Hayes(6), Won-Pyo Hong(4), T. Y. Chang(3), M.D. Feuer(3), B. Lalevic(3), N. J. Sauer(3), K. Lee(3), S.C. Hong(3), K.I. Jeon(3), R. Bhat(2), Bambang Sugeng(2), C.J. Wei(2)