S.C. Hong

Korea Advanced Institute of Science and Technology — South Korea

Physics and Astronomy · Physical Sciences

6h-index146citations14works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(11), Semiconductor materials and devices(7), Advancements in Semiconductor Devices and Circuit Design(5), Quantum and electron transport phenomena(4), Semiconductor Lasers and Optical Devices(4)

Publications14 total

Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers
Current Applied Physics·2005· 4 cited
An Adaptive CMMSE Receiver for Space–Time Block-Coded CDMA Systems in Frequency- Selective Fading Channels
IEEE Transactions on Vehicular Technology·2004· 4 cited
Infrared photodetector by InAs/GaAs quantum dots embedded in modulation doped AlGaAs/GaAs heterostructures
International Conference on Molecular Bean Epitaxy·2003
Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature
Applied Physics Letters·2003· 29 cited
High-performance InP-based HEMT's with a graded pseudomorphic channel
2002· 2 cited
High-performance InP-based HEMT's with a graded pseudomorphic channel
2002· 2 cited
Fabrication of a dual-gate-controlled Coulomb blockade transistor based on a silicon-on-insulator structure
Semiconductor Science and Technology·1998· 6 cited
Graded pseudomorphic channel AlInP/AlInAs/GaInAsHEMTs with high channel breakdown voltage
Electronics Letters·1994· 7 cited
Transconductance compression near subthreshold of GaAs floated electron channel field effect transistor
Solid-State Electronics·1994
Low-power exciton-based heterojunction bipolar transistors for thresholding logic applications
IEEE Journal of Quantum Electronics·1991· 6 cited
Integrated multi-quantum-well controller-modulator with high gain for low-power photonic switching
Electronics Letters·1989· 14 cited
Intersubband absorption in strained In<i>x</i>Ga1−<i>x</i>As/Al0.4Ga0.6As (0≤<i>x</i>≤0.15) multiquantum wells
Applied Physics Letters·1989· 32 citedOpen Access
Stark effect in GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As quantum wells: Light scattering by intersubband transitions
Physical review. B, Condensed matter·1987· 39 cited
Electric field effects on intersubband transitions in quantum well structures
Superlattices and Microstructures·1987· 1 citedOpen Access

Frequent Co-authors

P. Bhattacharya(5), J. Singh(3), K.B. Chough(3), B.W.-P. Hong(3), K. Lee(3), K.I. Jeon(3), Jianan Song(3), C. Caneau(3), K. Bajema(2), R. Merlín(2), Feng-Yuh Juang(2), Moon‐Deock Kim(2), S. K. Noh(2), Xiuli Zhou(1), G. Hugo(1), Erdoḡan Gülari(1), Su-Jin Noh(1), T. W. Kim(1), W.Q. Li(1), J. E. Oh(1)