B. Lalevic

Rutgers, The State University of New Jersey — United States

Engineering · Physical Sciences

18h-index1.4kcitations109works0.02yr avg
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Research Topics

Semiconductor materials and devices(42), Transition Metal Oxide Nanomaterials(19), Advanced Memory and Neural Computing(16), Advancements in Semiconductor Devices and Circuit Design(16), Semiconductor materials and interfaces(16)

Publications109 total

Fabrication Of On-chip Anode Of Vacuum Micro-diode
2005
Pulse generation and measurement of radiated waveforms from an optically activated impulse generator
2002
Measurement of conduction band discontinuity in pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures
2002
Silicon vacuum microdiode with on-chip anode
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1994· 4 cited
Two-dimensional simulation of silicon avalanche cathodes
IEEE Transactions on Electron Devices·1994· 3 cited
Design considerations of silicon avalanche cathodes
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1993· 10 cited
High-performance highly strained Ga/sub 0.23/In/sub 0.77/As/Al/sub 0.48/In/sub 0.52/As MODFET's obtained by selective and shallow etch guide recess techniques
IEEE Electron Device Letters·1992· 13 cited
Characterization of photoconductive impulse generator utilizing a tapered radial transmission line
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1992
<title>Monolithic, photoconductive GaAs pulser and its radiated waveform</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1992
Measurement of the conduction-band discontinuity in pseudomorphic In<i>x</i>Ga1−<i>x</i>As/In0.52Al0.48As heterostructures
Applied Physics Letters·1992· 27 cited
Comparison of device performance of highly strained Ga <sub>1−x</sub> InxAs/a1 <sub>0.48</sub> In <sub>0.52</sub> As (0.53 ≤ × ≤ 0.90) MODFETs
Electronics Letters·1992· 22 cited
Avalanche electron emitter arrays using Si ultra-shallow p-n junctions
IEEE Transactions on Electron Devices·1991
Very-high-performance highly strained Ga/sub 0.23/In/sub 0.77/As channel MODFETs
IEEE Transactions on Electron Devices·1991· 4 cited
Photoconductive impulse generation and radiation
IEEE Transactions on Microwave Theory and Techniques·1991· 12 cited
Monolithic, photoconductive impulse generator using a GaAs wafer
Applied Physics Letters·1991· 6 cited
&lt;title&gt;High-power/high-pulse repetition frequency (PRF) pulse generation using a laser-diode-activated photoconductive GaAs switch&lt;/title&gt;
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1991· 1 cited
Silicon avalanche cathodes and their characteristics
IEEE Transactions on Electron Devices·1991· 11 cited
Photoconductive nanosecond pulse generation utilizing radial transmission lines
IEEE Transactions on Electron Devices·1990· 9 cited
Arrayed silicon avalanche cathodes
IEEE Electron Device Letters·1990· 12 cited
Magnetically-related properties of bismuth containing high Tc superconductors
Journal of Magnetism and Magnetic Materials·1990· 6 cited
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Frequent Co-authors

N. Fuschillo(9), T.L. Poteat(6), Robert J. Zeto(5), W. Slusark(5), B. Kuliyev(4), M. Shoga(4), G. C. Vezzoli(4), Mujeeb Yousuf(3), N.K. Annamalai(3), T. Y. Chang(3), B. Leung(3), G. Taylor(3), Robert J. Youmans(3), M. Weiner(3), Yicheng Lu(3), B. Moon(3), A. Safari(3), Sandra S. Eaton(2), J. M. Kuo(2), K.B. Chough(2)