B. P. Van der Gaag

Physics and Astronomy · Physical Sciences

16h-index839citations47works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(28), Quantum and electron transport phenomena(13), Semiconductor materials and devices(13), Semiconductor Lasers and Optical Devices(9), GaN-based semiconductor devices and materials(8)

Publications47 total

Optical nonlinearity in GaAs quantum dots
Journal of Applied Physics·2007· 5 cited
Carbon-doped base InP/InGaAs HBTs with f/sub T/ = 200 GHz
2005· 7 cited
A f/sub T/=175 GHz carbon-doped base InP/InGaAs HBT
2002· 7 cited
Charge-separated state in strain-induced quantum dots
Applied Physics Letters·1997· 10 cited
Long-lived intermediate state in strain-confined quantum dots
Superlattices and Microstructures·1996· 4 citedOpen Access
Excitation Transfer from the Host Quantum Well to Strain-induced Quantum Dots
APS March Meeting Abstracts·1996
Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As quantum wires and quantum dots
Physical review. B, Condensed matter·1995· 32 cited
Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dots
Superlattices and Microstructures·1995· 8 citedOpen Access
Optical Study of Carrier Transfer in Strain-induced Quantum Dots
MRS Proceedings·1995
Strain-confined wires and dots at a GaAs/AlxGa1-xAs interface
Superlattices and Microstructures·1995· 3 citedOpen Access
Growth of heavy carbon-doped GaInAs lattice matched to InP by chemical beam epitaxy
Applied Physics Letters·1994· 28 cited
Transient photoluminescence of GaAs/AlGaAs quantum wires
Journal of Luminescence·1994· 4 cited
Millimetre-wave InP/InGaAs heterojunction bipolartransistors with a subpicosecond extrinsic delay time
Electronics Letters·1994· 13 cited
Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
IEEE Electron Device Letters·1994· 34 cited
Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy
Electronics Letters·1993· 5 cited
High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy
Electronics Letters·1993· 12 cited
Optical Spectroscopy of Quantum Wires and Dots
1993
Carbon-Doped Base InPhGaAs HBTs withfT= 200 GHz
1993
Experimental measurement of scattering coefficients in mesoscopic conductors
Physical review. B, Condensed matter·1992· 32 cited
High reflectivity dielectric mirror deposition by reactive magnetron sputtering
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1992· 9 cited
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Frequent Co-authors

Kathleen Kash(19), L. T. Florez(17), Axel Scherer(17), J. P. Harbison(15), A. S. Gozdz(14), M. L. Roukes(10), M. D. Sturge(9), Jong‐In Song(8), Derek D. Mahoney(7), K.B. Chough(7), Wonbin Hong(7), C. J. Palmstrøm(6), J. M. Worlock(5), P.S.D. Lin(4), L. M. Schiavone(4), T. J. Thornton(4), Yitong Gu(4), J. R. Hayes(3), P. Grabbe(3), Kenneth L. Shepard(3)