A. I. Patuk

Institute of Solid State Physics and Semiconductors — BY

Engineering · Physical Sciences

7h-index124citations20works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(10), Chalcogenide Semiconductor Thin Films(7), Silicon Nanostructures and Photoluminescence(6), Quantum Dots Synthesis And Properties(5), Semiconductor materials and interfaces(5)

Publications20 total

Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions
Thin Solid Films·2003· 18 cited
Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations
Solar Energy Materials and Solar Cells·2002· 12 cited
Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing
Physica B Condensed Matter·2001· 16 cited
Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon
Materials Science in Semiconductor Processing·2001· 13 cited
Optical spectroscopy of excitonic states in CuInSe2
Semiconductors·2000· 11 cited
Luminescence of silicon films on sapphire irradiated with high-energy particles
Journal of Applied Spectroscopy·1999
Free and bound exciton emission in CuInSe2 and CuGaSe2 single crystals
Solar Energy Materials and Solar Cells·1998· 34 cited
Photoluminescence of single crystals of cadmium diarsenide
Journal of Applied Spectroscopy·1998
Optical spectroscopy of excitonic states in zinc diarsenide
Semiconductors·1997· 2 cited
Photoluminescence of gallium arsenide electron-irradiated at 20 K
Journal of Applied Spectroscopy·1997
A luminescence study of defects and internal strains in ion-implanted silicon on sapphire films
Materials Chemistry and Physics·1996· 4 cited
Optical properties of AIIBV semiconductor compounds
Materials Chemistry and Physics·1996· 9 cited
Spectroscopic system for investigating the luminescence of semiconductor materials under low-temperature ion implantation
Journal of Applied Spectroscopy·1994
The formation of luminescence centers in silicon crystals after electron irradiation and ion implantation at 20 K
physica status solidi (a)·1994· 4 cited
LUMINESCENCE OF SEMICONDUCTOR MATERIALS UNDER LOW-TEMPERATURE ION IMPLANTATION
1994
Photoluminescence of silicon irradiated with electrons at 20 K
Journal of Applied Spectroscopy·1993
Optical transmittance and luminescence of zinc diarsenide
Journal of Applied Spectroscopy·1993
Luminescence at impurity centers in zinc diarsenide
Journal of Applied Spectroscopy·1992· 1 cited
Photoluminescence of silicon implanted with helium and neon ions
Journal of Applied Spectroscopy·1991
Photoluminescence of irradiated silicon-germanium solid solutions
Journal of Applied Spectroscopy·1987

Frequent Co-authors

I. A. Shakin(19), А. В. Мудрый(11), А. В. Мудрый(9), Ф. П. Коршунов(7), С. Ф. Маренкин(5), В. Ф. Гременок(3), T. P. Larionova(3), A. Ulyashin(3), R. Job(3), W. R. Fahrner(3), I. V. Bodnar(2), I.A. Victorov(2), М. V. Yakushev(2), В. М. Трухан(2), D. I. Pishchikov(2), V. V. Emtsev(1), V. Yu. Davydov(1), G. A. Oganesyan(1), А.К. Fedotov(1), A.V. Mazanik(1)