Antti Karjalainen

University of Helsinki — Finland

Materials Science · Physical Sciences

7h-index271citations12works0.02yr avg
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Research Topics

Ga2O3 and related materials(7), Semiconductor materials and devices(5), Electronic and Structural Properties of Oxides(5), ZnO doping and properties(3), Muon and positron interactions and applications(3)

Publications12 total

Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed <i>n</i>-type <i>β</i>-Ga2O3
Journal of Applied Physics·2021· 36 citedOpen Access
Split Ga vacancies: abundant defects in beta-Ga2O3
2021· 2 citedOpen Access
Split Ga vacancies in <i>n</i>-type and semi-insulating β-Ga2O3 single crystals
Applied Physics Letters·2021· 29 citedOpen Access
Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:mrow><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
Physical review. B./Physical review. B·2020· 51 citedOpen Access
TiSr antisite: An abundant point defect in SrTiO3
Journal of Applied Physics·2020· 16 citedOpen Access
Split Ga vacancies and the colossal anisotropy of positron annihilation spectra in $\boldsymbol{\beta}$-Ga$_2$O$_3$
arXiv (Cornell University)·2020· 1 citedOpen Access
Ti- and Fe-related charge transition levels in β−Ga2O3
Applied Physics Letters·2020· 57 citedOpen Access
Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
2019· 7 citedOpen Access
Framework for a positron microscope
Aaltodoc (Aalto University)·2015Open Access
Optical transmission measurements on proton irradiated AlN
2014
Identification of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>V</mml:mi><mml:mi>Al</mml:mi></mml:msub></mml:math>-O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mi mathvariant="normal">N</mml:mi></mml:msub></mml:math>defect complex in AlN single crystals
Physical Review B·2011· 71 citedOpen Access
The complexation of two different ammonium ions with resorcarenes in protic solvent medium investigated by electrospray ionisation Fourier transform ion cyclotron resonance mass spectrometry
Rapid Communications in Mass Spectrometry·2006· 1 cited

Frequent Co-authors

Ilja Makkonen(8), Filip Tuomisto(8), Vera Prozheeva(4), Joel B. Varley(3), Lasse Vines(2), Kristoffer Simula(2), Vincent Callewaert(2), J.‐M. Mäki(1), Sami Suihkonen(1), J. Räisänen(1), T. Yu. Chemekova(1), Yu.N. Makarov(1), Christian Zimmermann(1), Ymir Kalmann Frodason(1), Abraham Willem Barnard(1), K. Irmscher(1), Zbigniew Galazka(1), W.E. Meyer(1), F.D. Auret(1), Philip Weiser(1)