Filip Tuomisto

Helsinki Institute of Physics — Finland

Engineering · Physical Sciences

42h-index6.0kcitations313works2.22yr avg
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Research Topics

Semiconductor materials and devices(123), Muon and positron interactions and applications(106), GaN-based semiconductor devices and materials(83), ZnO doping and properties(67), Ga2O3 and related materials(63)

Publications313 total

Point defects in proton-irradiated highly Ga- and B-doped Ge
Journal of Applied Physics·2026Open Access
Spin-doping and diamagnetic-paramagnetic interplay in single crystal <i>β</i> -Ga <sub>2</sub> O <sub>3</sub>
Materials Research Express·2025Open Access
Diffusion kinetics of irradiation-induced vacancies in MoNbTi refractory multi-principal element alloy
Journal of Physics Conference Series·2025Open Access
Elemental diversity in high entropy alloy MoNbTaVW: complex He diffusion paths and improved radiation resistance
2025Open Access
Formation of coherent nanocomposite structure in nickel-aluminum alloys synthesized far from equilibrium
Acta Materialia·2025Open Access
Diffusion of helium in tungsten-based refractory alloys by molecular dynamics simulations
Journal of Nuclear Materials·2025Open Access
Crystal-field splitting strength of U-6 <i>d</i> orbitals in NaUO <sub>3</sub> , KUO <sub>3</sub> and RbUO <sub>3</sub>
Journal of Synchrotron Radiation·2025Open Access
Effect of lithium diffusion into Ga2O3 thin films
Applied Surface Science·2025· 1 citedOpen Access
Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN
Nature Communications·2025· 1 citedOpen Access
Growth, electrical, and thermoelectric characterization of (010) β-Ga2O3 thin films doped with Si and Ba
2025
Nanoscale structure formation in nickel-aluminum alloys synthesized far from equilibrium
arXiv (Cornell University)·2025Open Access
Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN
2025Open Access
Diffusion of Helium in Tungsten-Based Refractory Alloys by Molecular Dynamics Simulations
SSRN Electronic Journal·2025Open Access
Effect of Lithium Diffusion into Ga2o3 Thin Films
SSRN Electronic Journal·2025Open Access
Nanoscale Structure Formation in Nickel-Aluminum Alloys Synthesized Far from Equilibrium
SSRN Electronic Journal·2025Open Access
Enhanced migration of mono-vacancies in AlxFeCoCrNi high entropy alloys
Journal of Alloys and Compounds·2024· 4 citedOpen Access
Migration and clustering of early-stage irradiation damage in vanadium
Physical Review Materials·2024· 2 cited
Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications
Advanced Electronic Materials·2024Open Access
On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga2O3
Journal of Applied Physics·2024· 11 citedOpen Access
Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys
Journal of materials research/Pratt's guide to venture capital sources·2024· 1 citedOpen Access
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Frequent Co-authors

Ilja Makkonen(10), K. Saarinen(9), A. Zubiaga(7), Andrej Kuznetsov(5), D. C. Look(4), Bengt Svensson(4), Vera Prozheeva(4), G. C. Farlow(3), D. Gogova(3), Yu.N. Makarov(3), J.‐M. Mäki(3), Antti Karjalainen(3), Sami Suihkonen(3), Janne Heikinheimo(3), F. Plazaola(3), José Antonio Millán-García(3), V. Muñoz‐Sanjosé(3), V. Ranki(2), Lasse Vines(2), L. J. Brillson(2)