V. Ranki

Helsinki Institute of Physics — Finland

Engineering · Physical Sciences

13h-index1.2kcitations20works0.02yr avg
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Research Topics

Semiconductor materials and devices(13), Muon and positron interactions and applications(11), GaN-based semiconductor devices and materials(8), Silicon and Solar Cell Technologies(7), Semiconductor materials and interfaces(6)

Publications20 total

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN
Physical Review B·2007· 85 citedOpen Access
Dissociation of V<sub>Ga</sub>–O<sub>N</sub> complexes in HVPE GaN by high pressure and high temperature annealing
physica status solidi (b)·2006· 11 cited
Direct evidence of impurity decoration of Ga vacancies in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaN</mml:mi></mml:mrow></mml:math>from positron annihilation spectroscopy
Physical Review B·2006· 102 citedOpen Access
Gallium and nitrogen vacancies in GaN: Impurity decoration effects
Physica B Condensed Matter·2006· 25 cited
Positron trapping at thermal vacancies in highly As-doped Si
Physica B Condensed Matter·2006· 2 cited
Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy
Physical Review Letters·2005· 37 citedOpen Access
Vacancies in highly doped silicon studied by positron annihilation spectroscopy
Aaltodoc (Aalto University)·2005· 2 citedOpen Access
Formation of Thermal Vacancies in Highly As and P Doped Si
Physical Review Letters·2004· 53 cited
Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si
Physical Review B·2004· 43 cited
Formation of vacancy-impurity complexes in highly As- and P-doped Si
Physica B Condensed Matter·2003· 5 cited
Evidence of the Zn Vacancy Acting as the Dominant Acceptor in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type ZnO
Physical Review Letters·2003· 457 citedOpen Access
Identification of vacancy complexes in Si by positron annihilation
Journal of Physics Condensed Matter·2003· 5 cited
Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. <b>82</b>, 3433 (2003)]
Applied Physics Letters·2003· 2 citedOpen Access
Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy
Applied Physics Letters·2003· 125 cited
Electrical deactivation by vacancy-impurity complexes in highly As-doped Si
Physical review. B, Condensed matter·2003· 37 cited
Vacancies as compensating centers in bulk GaN: doping effects
Journal of Crystal Growth·2002· 25 cited
Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects
Applied Surface Science·2002· 10 cited
Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si
Physical Review Letters·2002· 57 cited
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
Physical review. B, Condensed matter·2001· 114 cited
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
Physica B Condensed Matter·1999· 26 cited

Frequent Co-authors

K. Saarinen(18), D. C. Look(6), J. Oila(5), M. J. Puska(5), Jani Kivioja(4), T. Suski(4), Ilja Makkonen(4), Filip Tuomisto(3), P. Hautojärvi(3), I. Grzegory(3), S. Hautakangas(3), R. J. Molnar(2), S. S. Park(2), S. K. Lee(2), Jeong-Yeol Han(2), J. Likonen(2), Xin Xu(2), J. Nissilä(2), Michał Boćkowski(2), D. C. Look(1)