B. P. Papchenko

Physics and Astronomy · Physical Sciences

5h-index90citations34works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(15), Ga2O3 and related materials(10), ZnO doping and properties(6), Gas Sensing Nanomaterials and Sensors(6), Semiconductor Quantum Structures and Devices(4)

Publications34 total

Novel generalized algorithm for estimating energy characteristics of electron-optical components of laser navigation system operating in cosmic vacuum
Journal of Radio Electronics·2023· 1 citedOpen Access
Transformable solar sail mast based on drives made of shape memory materials
Izvestiâ vysših učebnyh zavedenij Priborostroenie·2021Open Access
Investigation of water splitting using III‐N structures
physica status solidi (b)·2017· 5 cited
Investigation of Direct Water Photoelectrolysis Process Using III-N Structures
Materials science forum·2017
Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy
Modern Electronic Materials·2017· 1 citedOpen Access
Proposals for the construction of space systems based on small spacecraft and a transport and power module with a nuclear power plant
Solar System Research·2016· 2 cited
Experimental setup to study the efficiency of semiconductor photoelectrode in hydrogen generator
Izvestiâ vysših učebnyh zavedenij Priborostroenie·2016Open Access
Optical transmission of strained GaN/sapphire structures
Journal of Physics Conference Series·2016Open Access
Etching of GaN layers at electrolysis under UV-irradiation
Journal of Physics Conference Series·2016Open Access
Specific of a photocurrent in GaN-based photoelectrochemical cell
Journal of Physics Conference Series·2016Open Access
Photoelectrochemical corrosion of GaN-based p-n structures
Journal of Physics Conference Series·2016· 1 citedOpen Access
The efficiency of GaN/AlGaN p-n heterostructures in UV spectral range
Journal of Physics Conference Series·2016· 3 citedOpen Access
Photoelectrochemical Corrosion of GaN/AlGaN-Based p-n Structures
American Journal of Applied Sciences·2016· 2 citedOpen Access
Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering·2016Open Access
Electrochemical etching of p–n-GaN/AlGaN photoelectrodes
Technical Physics Letters·2016· 2 cited
Экспериментальная установка для исследования эффективности полупроводниковых фотоэлектродов генератора водорода
Известия высших учебных заведений. Приборостроение·2016
Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE
Journal of Electronic Materials·2015· 1 cited
The efficiency of UV LEDs based on GaN/AlGaN heterostructures
Journal of Physics Conference Series·2015· 2 citedOpen Access
Application of GaN for photoelectrolysis of water
Journal of Physics Conference Series·2015· 3 citedOpen Access
Laser cutting of GaN/Al<sub>2</sub>O<sub>3</sub>structures
Journal of Physics Conference Series·2015· 1 citedOpen Access
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Frequent Co-authors

A. Usikov(22), S Yu Kurin(17), H. Helava(16), Yu.N. Makarov(14), M. V. Puzyk(10), V. К. Sysoev(9), I. A. Ermakov(8), Yuri Makarov(5), A. E. Chernyakov(5), A. Yu. Nikiforov(5), A. A. Antipov(5), A. Y. Polyakov(4), In‐Hwan Lee(4), I. S. Barash(3), A. D. Roenkov(3), N. M. Shmidt(3), S A Tarasov(3), P. A. Vyatlev(3), Jin‐Hyeon Yun(3), E. B. Yakimov(3)