Yuri Makarov

Physics and Astronomy · Physical Sciences

12h-index783citations71works0.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(30), Silicon Carbide Semiconductor Technologies(25), Ga2O3 and related materials(15), Silicon and Solar Cell Technologies(13), Semiconductor materials and devices(12)

Publications71 total

Between the Don and Kuban: Battles of Operational Significance of the Troops of the 12th Army of the Red Army (Late July – Early August 1942)
Общество философия история культура·2025
Desctruction of frame composite concrete slab that is off-center loaded
Zhurnal Srednevolzhskogo Matematicheskogo Obshchestva·2024· 1 citedOpen Access
The Role of NKVD and GKO Member L.P. Beria in Strengthening the Defensive Capability of the 46th Army (August – September 1942)
Общество философия история культура·2024
Defense of the Passes of the Bzyb Range (August – September 1942)
Общество философия история культура·2023
Combat Operations of the 23rd and 33rd NKVD Regiments in the Battle of the North Caucasus (July 1942 - January 1943)
Общество философия история культура·2023· 1 cited
Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses
Biosensors·2021· 7 citedOpen Access
Luminescence of structured InN deposited on graphene interlayer
Journal of Luminescence·2020· 3 cited
Graphene/SiC dies for electrochemical blood-type sensing; pp. 207–213
Proceedings of the Estonian Academy of Sciences·2019· 9 citedOpen Access
Electrochemical Treatment of Graphene
Key engineering materials·2019· 3 cited
Graphene/SiC Functionalization for Blood Type Sensing Applications
Materials science forum·2018· 2 cited
Investigation of water splitting using III‐N structures
physica status solidi (b)·2017· 5 cited
Investigation of Direct Water Photoelectrolysis Process Using III-N Structures
Materials science forum·2017
Photoelectrochemical Corrosion of GaN/AlGaN-Based p-n Structures
American Journal of Applied Sciences·2016· 2 citedOpen Access
HVPE GaN Growth on 4H SiC and Die Dicing
Materials science forum·2016
Highly Sensitive NO<sub>2</sub> Graphene Sensor Made on SiC Grown in Ta Crucible
Materials science forum·2016
15 eV Protons Irradiation of the GaN Schottky Diodes
Materials science forum·2016· 2 cited
Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures
physica status solidi (RRL) - Rapid Research Letters·2015· 8 cited
Peculiarities of defect generation under injection current in LEDs based on group‐III nitride<sup>3</sup>N nanostructures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2015· 7 cited
Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2015
Efficiency of UVA LEDs grown by HVPE in relation with the active region thickness
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2015· 5 citedOpen Access
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Frequent Co-authors

S. Yu. Karpov(15), H. Helava(14), M.S. Ramm(12), A. Usikov(12), A. D. Roenkov(10), A.V. Kulik(9), S Yu Kurin(7), I. S. Barash(7), N. M. Shmidt(5), М. В. Богданов(5), С. П. Лебедев(5), A. А. Lebedev(5), B. P. Papchenko(4), M.G. Ramm(4), Alexander I. Zhmakin(4), A. Y. Polyakov(4), E. N. Mokhov(4), A. Winnacker(3), O.V. Avdeev(3), Andrey Antipov(3)