Yu. G. Musikhin

Physics and Astronomy · Physical Sciences

25h-index2.3kcitations110works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(87), Advanced Semiconductor Detectors and Materials(36), Semiconductor Lasers and Optical Devices(35), GaN-based semiconductor devices and materials(25), Semiconductor materials and interfaces(16)

Publications110 total

Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
Semiconductors·2011· 8 cited
Quantum dots for GaAs-based surface emitting lasers at 1300 nm
Advances in Solid State Physics·2007· 1 cited
INVESTIGATIONS OF <font>InGaN</font>/<font>GaN</font> AND <font>InGaN</font>/<font>InGaN</font> QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR
International Journal of Nanoscience·2007
Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system
Technical Physics Letters·2007
Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
Semiconductors·2007· 4 cited
Analysis of the local indium composition in ultrathin InGaN layers
Semiconductor Science and Technology·2007· 7 cited
Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature
Semiconductors·2006· 3 cited
An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures
Semiconductors·2006· 4 cited
Localization of non‐equilibrium carriers in deep InGaN quantum dots and its impact on the device performance
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006
Comparative study of GaAs‐based 1.5 micron‐range InAs/InGaAs and InAs/InAlAs self‐assembled quantum dots
physica status solidi (a)·2006· 1 cited
InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm
Semiconductors·2006· 7 cited
Coupling of electron states in the InAs/GaAs quantum dot molecule
Semiconductors·2006· 5 cited
Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 10 cited
1.3-1.5 μm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 3 cited
Epitaxial c-GaAs/h-GaN Heterostructures
MRS Proceedings·2005
Near-field photoluminescence spectroscopy of InGaN quantum dots.
MRS Proceedings·2005
Properties of InGaAsN heterostructures emitting at 1.3–1.55 µm
Semiconductor Science and Technology·2005· 11 cited
The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system
Semiconductors·2005· 7 cited
Surface control of cooperative phenomena in nanostructured materials with quantum dots
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2005· 3 cited
Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates
Applied Physics Letters·2005· 1 cited
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Frequent Co-authors

V. M. Ustinov(30), N. N. Ledentsov(23), D. Bimberg(22), Zh. I. Alfërov(20), A. F. Tsatsul’nikov(20), A. R. Kovsh(18), Н. А. Берт(17), B. V. Volovik(12), A. E. Zhukov(11), Yu. M. Shernyakov(11), A. Yu. Egorov(10), M. V. Maximov(10), P. Werner(8), N. V. Kryzhanovskaya(8), S. S. Mikhrin(7), N. N. Ledentsov(7), N. A. Maleev(6), A. V. Sakharov(6), W. V. Lundin(6), М. В. Максимов(6)