W. V. Lundin

Ioffe Institute — Russia

Physics and Astronomy · Physical Sciences

22h-index2.3kcitations282works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(247), Semiconductor Quantum Structures and Devices(102), Ga2O3 and related materials(82), ZnO doping and properties(59), Semiconductor materials and devices(45)

Publications282 total

Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2025
(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell
Applied Physics Letters·2024
Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range
Technical Physics Letters·2023
Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure
Applied Physics Letters·2023· 2 cited
AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
Materials·2023· 1 citedOpen Access
GaN/AlGaN resonant Bragg structure
Известия Российской академии наук Серия физическая·2023Open Access
A GaN/AlGaN Resonance Bragg Structure
Bulletin of the Russian Academy of Sciences Physics·2023· 1 cited
Critical Disorder in InGaN/GaN Resonant Bragg Structures
Bulletin of the Russian Academy of Sciences Physics·2023· 1 cited
Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
Materials·2022· 8 citedOpen Access
Critical spatial disorder in InGaN resonant Bragg structures
Applied Physics Letters·2022· 6 cited
A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology
Technical Physics Letters·2022· 5 cited
Fabrication and Testing of Substrates Made from Bulk Gallium Oxide Crystals by the Cleavage Method
Reviews on advanced materials and technologies·2022Open Access
Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
Semiconductors·2021· 5 cited
Determination of hole diffusion length in n-GaN
Journal of Physics Conference Series·2021· 2 citedOpen Access
Nonlinear imaging of whispering gallery modes in GaN microwires
Journal of Physics Conference Series·2021Open Access
Study of Ga<sub>2</sub>O<sub>3</sub> deposition by MOCVD
Journal of Physics Conference Series·2021· 3 citedOpen Access
Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
Journal of Physics Conference Series·2021· 3 citedOpen Access
Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data
Journal of Physics Conference Series·2021· 1 citedOpen Access
Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
Technical Physics Letters·2021· 9 cited
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
Nanomaterials·2021· 6 citedOpen Access
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Frequent Co-authors

A. F. Tsatsul’nikov(33), A. V. Sakharov(27), E. E. Zavarin(27), A. E. Nikolaev(14), M. A. Yagovkina(9), A. S. Usikov(8), A. Usikov(8), I. L. Krestnikov(7), N. Cherkashin(7), S. O. Usov(7), A. Hoffmann(6), D. Bimberg(6), Zh. I. Alfërov(6), M. M. Rozhavskaya(6), V. Yu. Davydov(5), A. N. Smirnov(5), E.V. Yakovlev(5), Р.А. Талалаев(5), P. N. Brunkov(5), Yu. G. Musikhin(4)