M. M. Rozhavskaya

Ioffe Institute — Russia

Physics and Astronomy · Physical Sciences

8h-index177citations20works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(19), ZnO doping and properties(8), Semiconductor Quantum Structures and Devices(5), Metal and Thin Film Mechanics(5), Nanowire Synthesis and Applications(5)

Publications20 total

Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask
Journal of Physics Conference Series·2016· 1 citedOpen Access
Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
Physics of the Solid State·2015· 19 cited
Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling
physica status solidi (a)·2015· 20 citedOpen Access
Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film
Journal of Applied Physics·2015· 8 cited
GaN nanowires growth with record growth rate using Ti thin film
Journal of Physics Conference Series·2014Open Access
Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer
Technical Physics Letters·2014· 5 cited
Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy
Technical Physics Letters·2014· 1 cited
X-ray diffraction study of short-period AlN/GaN superlattices
Crystallography Reports·2013· 5 cited
Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
Semiconductors·2013· 2 cited
Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2013· 3 cited
Selective area growth of GaN on r‐plane sapphire by MOCVD
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2013· 1 cited
Lattice dynamics of short‐period AlN/GaN superlattices: Theory and experiment
physica status solidi (a)·2013· 12 cited
短周期AlN/GaN超格子に関する格子力学 理論および実験
2013
Fast AlGaN growth in a whole composition range in planetary reactor
Journal of Crystal Growth·2012· 19 cited
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
Semiconductors·2012· 5 cited
Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
Technical Physics Letters·2012· 1 cited
Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
Technical Physics Letters·2012· 16 cited
High growth rate MOVPE of Al(Ga)N in planetary reactor
Journal of Crystal Growth·2011· 21 cited
Specific features of gallium nitride selective epitaxy in round windows
Technical Physics Letters·2011· 3 cited
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Journal of Crystal Growth·2010· 35 cited

Frequent Co-authors

W. V. Lundin(20), A. F. Tsatsul’nikov(13), S. I. Troshkov(12), E. E. Zavarin(11), P. N. Brunkov(8), A. E. Nikolaev(6), V. Yu. Davydov(6), A. V. Sakharov(5), M. A. Yagovkina(4), E. Yu. Lundina(4), A. N. Smirnov(3), M. A. Yagovkina(2), S. O. Usov(2), N. Cherkashin(2), В. Г. Дубровский(2), С. А. Кукушкін(2), А. В. Осипов(2), M. A. Sinitsyn(2), R. N. Kyutt(2), D. V. Davydov(2)