Panni Wang

Georgia Institute of Technology — United States

Engineering · Physical Sciences

18h-index815citations32works0.02yr avg
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Research Topics

Ferroelectric and Negative Capacitance Devices(25), Advanced Memory and Neural Computing(24), Semiconductor materials and devices(20), MXene and MAX Phase Materials(5), Phase-change materials and chalcogenides(4)

Publications32 total

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 7 cited
Accelerating On-Chip Training with Ferroelectric-Based Hybrid Precision Synapse
ACM Journal on Emerging Technologies in Computing Systems·2022· 6 cited
Ferroelectric HfO <sub>2</sub> -based synaptic devices: recent trends and prospects
Semiconductor Science and Technology·2021· 44 cited
Cryogenic Performance for Compute-in-Memory Based Deep Neural Network Accelerator
2021· 13 cited
Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing
IEEE Transactions on Electron Devices·2021· 20 cited
Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition
Journal of materials research/Pratt's guide to venture capital sources·2021· 10 cited
Cryogenic Benchmarks of Embedded Memory Technologies for Recurrent Neural Network based Quantum Error Correction
2020· 18 cited
Interplay of Switching Characteristics, Cycling Endurance and Multilevel Retention of Ferroelectric Capacitor
2020· 25 cited
Depolarization Field Induced Instability of Polarization States in HfO<sub>2</sub> Based Ferroelectric FET
2020· 21 cited
(Invited) Ferroelectric Transistors for Synaptic Devices: Challenges and Prospects
ECS Meeting Abstracts·2020· 1 cited
Ferroelectric Transistors for Synaptic Devices: Challenges and Prospects
2020· 2 cited
Exploring argon plasma effect on ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin film atomic layer deposition
Journal of materials research/Pratt's guide to venture capital sources·2020
Ferroelectric devices and circuits for neuro-inspired computing
MRS Communications·2020· 40 cited
Non-volatile, small-signal capacitance in ferroelectric capacitors
Applied Physics Letters·2020· 43 cited
Investigating Ferroelectric Minor Loop Dynamics and History Effect—Part II: Physical Modeling and Impact on Neural Network Training
IEEE Transactions on Electron Devices·2020· 25 cited
Investigating Ferroelectric Minor Loop Dynamics and History Effect—Part I: Device Characterization
IEEE Transactions on Electron Devices·2020· 33 cited
Direct comparison of ferroelectric properties in Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> between thermal and plasma-enhanced atomic layer deposition
Nanotechnology·2020· 66 cited
Ferroelectric Tunnel Junction Optimization by Plasma-Enhanced Atomic Layer Deposition
2020· 13 cited
Modeling Multi-states in Ferroelectric Tunnel Junction
2020· 5 cited
Cryogenic behavior of NbO2 based threshold switching devices as oscillation neurons
Applied Physics Letters·2020· 39 cited
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Frequent Co-authors

Shimeng Yu(27), Asif Islam Khan(17), Jae Hur(13), Zheng Wang(9), Suman Datta(8), Nujhat Tasneem(6), Xiaoyu Sun(5), Gihun Choe(4), Wonbo Shim(4), Yuan-Chun Luo(4), Xiaochen Peng(4), Kai Ni(3), Yandong Luo(3), Yihan Chen(3), Mansun Chan(3), Wriddhi Chakraborty(2), Suwen Li(2), Lining Zhang(2), Xinnan Lin(2), Feng Xu(1)