Jae Hur

Inha University — South Korea

Engineering · Physical Sciences

27h-index3.0kcitations110works10.62yr avg
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Research Topics

Semiconductor materials and devices(63), Ferroelectric and Negative Capacitance Devices(52), Advanced Memory and Neural Computing(32), Advancements in Semiconductor Devices and Circuit Design(32), Ferroelectric and Piezoelectric Materials(13)

Publications110 total

Atomistic insights into structural ordering effects on martensitic transformations in Mg–Sc shape memory alloys
Acta Materialia·2026
Role of solute elements in Mg-Mg2Ni hydrogen storage alloys: A first-principles calculation study
Journal of Magnesium and Alloys·2024· 17 citedOpen Access
Atomistic investigation of phase transformations in NiTiCu shape memory alloys
International Journal of Mechanical Sciences·2024· 16 cited
Density functional theory study on the role of ternary alloying elements in TiMn2-based hydrogen storage alloys
International Journal of Hydrogen Energy·2024· 16 cited
Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors
IEEE Journal of the Electron Devices Society·2024· 4 citedOpen Access
Interfacial Oxide Layer Scavenging in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based MOS Structures With Ge Channel for Reduced Write Voltages
IEEE Transactions on Electron Devices·2023· 6 cited
Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance
Advanced Electronic Materials·2023· 6 citedOpen Access
Machine Learning-Assisted Statistical Variation Analysis of Ferroelectric Transistor: From Experimental Metrology to Adaptive Modeling
IEEE Transactions on Electron Devices·2023· 14 cited
Scalable In-Memory Clustered Annealer With Temporal Noise of Charge Trap Transistor for Large Scale Travelling Salesman Problems
IEEE Journal on Emerging and Selected Topics in Circuits and Systems·2023· 12 cited
Scalable In-Memory Clustered Annealer with Temporal Noise of FinFET for the Travelling Salesman Problem
2022 International Electron Devices Meeting (IEDM)·2022· 11 cited
Direct Quantitative Extraction of Internal Variables from Measured PUND Characteristics Providing New Key Insights into Physics and Performance of Silicon and Oxide Channel Ferroelectric FETs
2022 International Electron Devices Meeting (IEDM)·2022· 10 cited
Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures
ACS Applied Materials & Interfaces·2022· 23 cited
Characterizing HfO<sub>2</sub>-Based Ferroelectric Tunnel Junction in Cryogenic Temperature
IEEE Transactions on Electron Devices·2022· 17 cited
Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO<sub>2</sub>
ACS Applied Materials & Interfaces·2022· 22 cited
Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 16 cited
Low-Frequency Noise Characteristics of BEOL-Compatible IWO Transistor
2022· 2 cited
Standby Bias Improves the Endurance in Ferroelectric Field Effect Transistors due to Fast Neutralization of Interface Traps
2022· 1 cited
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Nature Communications·2022· 59 citedOpen Access
Nonvolatile Capacitive Crossbar Array for In‐Memory Computing
Advanced Intelligent Systems·2022· 60 citedOpen Access
A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET
IEEE Electron Device Letters·2022· 4 cited
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Frequent Co-authors

Shimeng Yu(23), Asif Islam Khan(20), Yang‐Kyu Choi(14), Zheng Wang(11), Nujhat Tasneem(10), Panni Wang(9), Seung‐Bae Jeon(8), Yuan-Chun Luo(8), Winston Chern(6), Min‐Ho Kang(5), Byung-Hyun Lee(5), Jun-Young Park(5), Gihun Choe(5), Suman Datta(5), Sarah Lombardo(5), Dong Il Lee(4), Hagyoul Bae(4), Dae-Chul Ahn(4), Tewook Bang(4), Mengkun Tian(4)