Winston Chern

Engineering · Physical Sciences

17h-index1.5kcitations76works3.62yr avg
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Research Topics

Semiconductor materials and devices(51), Advancements in Semiconductor Devices and Circuit Design(35), Ferroelectric and Negative Capacitance Devices(26), Nanowire Synthesis and Applications(14), Ferroelectric and Piezoelectric Materials(11)

Publications76 total

The First Switch Effect in Ferroelectric Field-Effect Transistors
arXiv (Cornell University)·2026Open Access
The First Switch Effect in Ferroelectric Field-Effect Transistors
ArXiv.org·2026Open Access
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
2025
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
arXiv (Cornell University)·2025Open Access
Radio Frequency Amplification in a Linear Crossed-Field Amplifier Using Cold Cathodes
IEEE Transactions on Electron Devices·2025
The First Switch Effect in Ferroelectric Field-Effect Transistors
IEEE Transactions on Device and Materials Reliability·2025· 1 cited
Impact of Anode Configuration on Performance of Field Emitter Arrays
IEEE Transactions on Electron Devices·2025· 1 cited
Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention
2025· 3 cited
Demonstration of Robust Retention in Band Engineered FEFETs for NAND Storage Applications Using Tunnel Dielectric Layer
IEEE Electron Device Letters·2024· 6 cited
Optimizing Memory Window for Ferroelectric Nand Applications: An Experimental Study on Dielectric Material Selection and Layer Positioning
IEEE Transactions on Electron Devices·2024· 11 cited
First write pulse-induced interface damage in ferroelectric field-effect transistors
2024· 1 cited
Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications
IEEE Electron Device Letters·2024· 9 cited
Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications
IEEE Electron Device Letters·2024· 17 cited
Compact Modeling Approach of Field Emitter Arrays
2024· 2 cited
Particle-in-Cell Simulation and Experimental Setup of a Crossed-Field Amplifier
2024
Field Emitter Failure Mechanisms and Harsh Environment Robustness Studies
2024
Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications
2024· 9 cited
Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors
IEEE Journal of the Electron Devices Society·2024· 4 citedOpen Access
Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications
2023· 45 cited
Simulation Modelling of Silicon Gated Field Emitter Based Electronic Circuits
Applied Sciences·2023· 1 citedOpen Access
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Frequent Co-authors

Asif Islam Khan(23), Shimeng Yu(22), Nujhat Tasneem(13), Zheng Wang(12), Mengkun Tian(12), Jae Hur(12), Chinsung Park(12), Suman Datta(12), Hang Chen(10), Akintunde I. Akinwande(10), Prasanna Venkatesan Ravindran(9), Nashrah Afroze(9), Nedeljko Karaulac(9), D.A. Antoniadis(8), Dipjyoti Das(8), Jim Browning(8), Judy L. Hoyt(7), Suhwan Lim(7), Kijoon Kim(7), Wanki Kim(7)