G. Landgren

Physics and Astronomy · Physical Sciences

28h-index2.6kcitations146works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(91), Semiconductor Lasers and Optical Devices(55), Photonic and Optical Devices(44), Semiconductor materials and devices(39), Semiconductor materials and interfaces(20)

Publications146 total

Kräv att högskolan satsar på vidareutbildning
2016
Lateral confinement optimisation of 1300 nm InGaAlAsP/InGaAsP Fabry-Perot lasers
Università del Salento·2015Open Access
Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD
Journal of Crystal Growth·2010· 18 cited
Interwell Carrier Transport in InGaAsP Quantum Well Lasers: Effect of Valence Band Barrier Height
2005
Interface Optimization of GalnAs/GalnAsP (λ=1.3μm) Superlattices by the Use of Growth Interruptions
Sixth International Conference Metalorganic Vapor Phase Epitaxy·2005
Photoexcited carrier transport in lnGaAsP/ InP quantum well laser structures
Conference on Lasers and Electro-Optics Europe·2005
Correlation between morphology and island formation on InP surfaces
2003
New MOVPE process for InP based HBT's using CBr/sub 4/, TBA and TBP in N/sub 2/ ambient
2003· 1 cited
Characterization of buried heterostructure lasers by scanning capacitance microscopy
2003· 1 cited
Improved homogeneity of LP-MOVPE grown InP/GaInAsP heterostructure for DBR using an optimized liner and susceptor arrangement
2003· 1 cited
Fabrication technology for high performance 3-electrode quantum well DFB lasers
2003
Current blocking behaviour of p/n/SI-InP:Fe/n structures at temperatures between 25 and 200 degrees C
2003· 1 cited
Outdiffusion from high dose Mg p/sup +/-contact implantations in InP
2003
Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE
Journal of Crystal Growth·2002· 2 cited
Versatile reactive ion beam etching (RIBE) of InP-based material using CH/sub 4//H/sub 2//Ar chemistry
2002
High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy
2002
Very rapid and selective epitaxy of InP around mesas of height up to 14 μm by hydride vapour phase epitaxy
2002· 3 cited
Low threshold, high quantum efficiency, high speed strain compensated multiquantum well lasers
2002· 3 cited
Process damage in chemically assisted ion beam etching of InP/GaInAsP
2002· 1 cited
Carrier transport effects in 1.3 μm MQW InGaAsP laser design
2002
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Frequent Co-authors

R. Ludeke(10), J. F. Morar(8), M. Rask(6), J. Wallin(6), Y. Jugnet(5), F. J. Himpsel(4), K. Streubel(4), S. Lourdudoss(4), N. Nordell(4), Christofer Silfvenius(4), F. J. Himpsel(3), Olof Sahlén(3), U. Olin(3), Eric Masseboeuf(3), O. Kjebon(3), P. Ojala(3), Sara Andersson(3), F. R. McFeely(2), N. D. Shinn(2), D. E. East̀man(2)