J. Wallin

École de management de Lyon — France

Engineering · Physical Sciences

13h-index600citations48works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(36), Photonic and Optical Devices(34), Semiconductor Quantum Structures and Devices(32), Advanced Fiber Laser Technologies(7), Advanced Semiconductor Detectors and Materials(5)

Publications48 total

Modelling New Firm Growth and Survival: Some Practical Solutions
Academy of Management Proceedings·2018· 1 cited
Tunable semiconductor lasers and their applications
2005
Interface Optimization of GalnAs/GalnAsP (λ=1.3μm) Superlattices by the Use of Growth Interruptions
Sixth International Conference Metalorganic Vapor Phase Epitaxy·2005
Photoexcited carrier transport in lnGaAsP/ InP quantum well laser structures
Conference on Lasers and Electro-Optics Europe·2005
Fabrication technology for high performance 3-electrode quantum well DFB lasers
2003
Regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in [110] and [-110] directions by hydride vapour phase epitaxy
2003· 4 cited
Complete single mode wavelength coverage over 40 nm with a super structure grating DBR laser
2002· 4 cited
High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy
2002
Very rapid and selective epitaxy of InP around mesas of height up to 14 μm by hydride vapour phase epitaxy
2002· 3 cited
Low threshold, high quantum efficiency, high speed strain compensated multiquantum well lasers
2002· 3 cited
Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection
2002· 2 cited
Gain characteristics of QW lasers
2002· 2 cited
Temperature performance of 1.55 μm vertical cavity lasers with integrated InP/GaInAsP Bragg reflector
2002· 3 cited
Evaluation of an automatic method to extract the grating coupling coefficient in different types of fabricated DFB lasers
IEEE Journal of Quantum Electronics·1998· 9 cited
The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy
Applied Physics Letters·1997· 8 cited
Temperature sensitivity of 1.54-μm vertical-cavity lasers with an InP-based Bragg reflector
IEEE Journal of Quantum Electronics·1997· 49 cited
The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy
Journal of Applied Physics·1996· 5 cited
Self-consistent calculations and magnetoluminescence studies of strained InP/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As heterojunctions
Physical review. B, Condensed matter·1996· 3 cited
Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector
IEEE Photonics Technology Letters·1996· 46 cited
Vertical integration of an InGaAs/InP HBT and a 1.55 µm strained MQW p-substrate laser
IEE Proceedings - Optoelectronics·1996· 5 cited
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Frequent Co-authors

G. Landgren(26), K. Streubel(22), S. Lourdudoss(11), T. Klinga(10), O. Kjebon(10), S. Marcinkevičius(9), U. Olin(9), S. Nilsson(8), L. Bäckbom(8), M. Öberg(6), B. Stålnacke(6), P.-J. Rigole(5), Stefan Nilsson(5), J. André(5), T. Lundström(5), K. Fröjdh(5), B. Stoltz(4), Ulf Öhlander(4), Torgil Kjellberg(4), J. Dalfors(4)