G. Ya. Krasnikov

Russian Academy of Sciences — Russia

Engineering · Physical Sciences

8h-index300citations38works0.02yr avg
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Research Topics

Semiconductor materials and devices(15), Silicon Nanostructures and Photoluminescence(8), Advancements in Semiconductor Devices and Circuit Design(6), Ferroelectric and Negative Capacitance Devices(6), Advanced Memory and Neural Computing(5)

Publications38 total

Mechanisms of Transport and Field Emission of Electrons in 2D Noncrystalline Carbon Heterostructures with a Quantum Barrier
Russian Microelectronics·2024
About the activities of the Russian Academy of Sciences in 2023 report of the president of the RAS academician of the RAS G.Ya. Krasnikovа
Вестник Российской академии наук·2024Open Access
Welcome speech (Russian Academy of Sciences, May 15, 2024)
Scientific Works of the Free Economic Society of Russia·2024
Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride
Journal of Non-Crystalline Solids·2022· 2 cited
INVESTIGATION OF THE ELECTRICAL CHARACTERISTICS OF MEMRISTOR STRUCTURES BASED ON SILICON NITRIDE, "Электронная техника. Серия 3. Микроэлектроника"
Электронная техника Серия 3 Микроэлектроника·2022
Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure
Chaos Solitons & Fractals·2020· 10 cited
Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure
Applied Physics Letters·2020· 33 cited
EFFECTIVE INTERFERENCE MECHANISM FOR CONDUCTIVITY CONTROL IN MOLECULAR ELECTRONICS
Nanotechnologies in Russia·2019
Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
Acta Materialia·2018· 108 citedOpen Access
$${\mathscr{P}}{\mathscr{T}}$$-symmetric interference transistor
Scientific Reports·2018· 11 citedOpen Access
Impact of Si-O Chemical Bond on the Structural-Impurity Properties of Silicon Dioxide
Nano- i Mikrosistemnaya Tehnika·2017
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
Russian Microelectronics·2017· 2 cited
Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon
Journal of Physics Conference Series·2017· 3 citedOpen Access
Integration of functional elements of resistive nonvolative memory with 1T-1R topology
Russian Microelectronics·2016· 3 cited
Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2
Russian Microelectronics·2016· 1 cited
Nature of traps responsible for the memory effect in silicon nitride
Applied Physics Letters·2016· 63 cited
Multilayer graphene-based flash memory
Russian Microelectronics·2016· 1 cited
Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers
Russian Microelectronics·2015· 3 cited
Electromagnetic wave propagation in a nonstationary medium
Doklady Mathematics·2015
Surface melting of crystals and the sintering of powders
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2015· 4 cited
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Frequent Co-authors

I. V. Matyushkin(12), N. A. Zaitsev(11), Oleg M. Orlov(10), V. A. Gritsenko(8), Timofey V. Perevalov(4), V. P. Bokarev(4), E. S. Gornev(4), Damir R. Islamov(3), Andrei A. Gismatulin(3), Sergey V. Korobov(3), Mikhaı̈l R. Baklanov(3), Oleg P. Gutshin(3), Аnna G. Chernikova(2), Andrey M. Markeev(2), Д.С. Мизгинов(2), А. А. Горбацевич(2), Н. М. Шубин(2), Yu. N. Novikov(2), Askar Rezvanov(2), K. P. Mogilnikov(2)