Oleg M. Orlov

Research Institute of Molecular Electronics — Russia

Engineering · Physical Sciences

13h-index715citations58works0.02yr avg
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Research Topics

Semiconductor materials and devices(36), Ferroelectric and Negative Capacitance Devices(28), Advanced Memory and Neural Computing(20), Advancements in Semiconductor Devices and Circuit Design(7), MXene and MAX Phase Materials(6)

Publications58 total

Influence of the kind of metal on memristor effect in MIS structures
2022
Memory Properties of SiOx- and SiNx-Based Memristors
Nanobiotechnology Reports·2021· 5 cited
ИССЛЕДОВАНИЕ МНОП-СТРУКТУР НА ОСНОВЕ LPCVD SIЗN4-СЛОЯ ДЛЯ RERAM
Nanoindustry Russia·2021
Charge transport mechanism in the forming-free memristor based on silicon nitride
Scientific Reports·2021· 39 citedOpen Access
Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure
Chaos Solitons & Fractals·2020· 10 cited
Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide
Applied Physics Letters·2020· 53 cited
ИССЛЕДОВАНИЕ ИЗГОТОВЛЕННЫХ МНОП-СТРУКТУР НА ОСНОВЕ LPCVD SI3N4-СЛОЯ ДЛЯ RERAM
Nanoindustry Russia·2020
MEMRISTOR STRUCTURES BASED ON THIN SI3N4 LAYERS AND CHARGE TRANSPORT MECHANISM RESEARCH
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis·2020
Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride
Russian Microelectronics·2020· 6 cited
Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure
Applied Physics Letters·2020· 33 cited
Compact Model of Nonlinear Dynamics while the Cycling of a Memristor
Nano- i Mikrosistemnaya Tehnika·2020
Features of the Improving of the HFO2 ReRAM Cells Characteristics Reproducibility
2019· 4 cited
Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
Acta Materialia·2018· 108 citedOpen Access
Setup for Secondary Electron-Electron Emission Coefficient Study
2018· 1 cited
Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/ TiN/SiO<sub>2</sub>/Si and TiN/Hf<sub>X</sub>Al<sub>1-X</sub>O<sub>Y</sub>/Pt/SiO<sub>2</sub>/Si Test Structures Obtained on the National Technological Basis
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2018
Evolution of the Charge Trap Density during Endurance of Ferroelectric HfO<sub>2</sub>:La
ECS Meeting Abstracts·2018
Comparison of flash-memory elements using materials based on graphene
Technical Physics Letters·2017· 3 cited
FRAM test memory cells radiation hardness research
2017· 1 cited
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
Russian Microelectronics·2017· 2 cited
The Charge Trap Density Evolution in Wake-Up and Fatigue Modes of FRAM
ECS Meeting Abstracts·2017
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Frequent Co-authors

V. A. Gritsenko(22), Damir R. Islamov(14), Timofey V. Perevalov(13), Andrey M. Markeev(12), G. Ya. Krasnikov(10), Аnna G. Chernikova(8), Maxim G. Kozodaev(6), Andrei A. Gismatulin(6), D. V. Negrov(5), В. Н. Кручинин(5), Gennady Ja. Krasnikov(5), Konstantin Egorov(4), Yu. Yu. Lebedinskiǐ(4), A. Zenkevich(4), E. S. Gornev(4), Yu. A. Matveev(3), С. А. Зайцев(3), В. Ш. Алиев(3), Igor P. Prosvirin(3), Gennady Ya. Krasnikov(2)