Dong-Hyun Wang

Chungbuk National University — South Korea

Engineering · Physical Sciences

6h-index102citations15works2.52yr avg
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Research Topics

Semiconductor materials and devices(14), Advancements in Semiconductor Devices and Circuit Design(14), Integrated Circuits and Semiconductor Failure Analysis(7), Ferroelectric and Negative Capacitance Devices(4), Advanced Memory and Neural Computing(2)

Publications15 total

Investigation of Deuterium De-Passivation by Repetitive Thermal Stress in CMOS Fabrication
IEEE Transactions on Device and Materials Reliability·2024· 1 cited
High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure
IEEE Transactions on Electron Devices·2024· 4 cited
Low-Temperature Deuterium Annealing for High-Performance and Reliable Poly-Si Channel Thin-Film Transistors
IEEE Transactions on Electron Devices·2023· 6 cited
Physically Unclonable Function With a Rough Silicon Channel MOSFET
IEEE Transactions on Electron Devices·2023· 4 cited
Low-temperature deuterium annealing for improved electrical characteristics of SONOS
Microelectronics Reliability·2023· 7 cited
Device Optimization for Short-channel Effects Suppression in UFETs
JSTS Journal of Semiconductor Technology and Science·2023· 2 cited
Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing
IEEE Transactions on Electron Devices·2023· 15 cited
Lowering of Schottky Barrier Height in a Vertical Pillar MOSFET by Deuterium Annealing
IEEE Electron Device Letters·2023· 3 cited
Low-Temperature Deuterium Annealing for the Recovery of Ionizing Radiation-Induced Damage in MOSFETs
IEEE Transactions on Device and Materials Reliability·2023· 12 cited
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure <i>D</i> <sub>2</sub> and <i>N</i> <sub>2</sub> Annealing
IEEE Transactions on Device and Materials Reliability·2023· 6 cited
Improvement of Device Reliability and Variability Using High Pressure Deuterium Annealing
Transactions on Electrical and Electronic Materials·2022· 2 cited
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation
IEEE Transactions on Device and Materials Reliability·2022· 11 cited
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET
Solid-State Electronics·2022· 14 cited
Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs
Micromachines·2022· 3 citedOpen Access
Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance
Materials·2022· 12 citedOpen Access

Frequent Co-authors

Jun-Young Park(15), Ja-Yun Ku(12), Daehan Jung(12), Khwang-Sun Lee(8), Sung-Su Yoon(6), Joon‐Kyu Han(5), Yang‐Kyu Choi(5), Ji‐Man Yu(4), Tae-Hyun Kil(4), Dongho Kim(2), Woo Cheol Shin(2), J. Y. Kim(2), Ju-Won Yeon(2), Seong‐Yun Yun(2), Byung‐Do Yang(1), Min-Kyeong Kim(1), Se‐Young Oh(1), Kiyoung Lee(1), Byungjin Cho(1), Hagyoul Bae(1)