Tae-Hyun Kil

Chungbuk National University — South Korea

Engineering · Physical Sciences

4h-index33citations18works1.12yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(11), Advancements in Semiconductor Devices and Circuit Design(9), Integrated Circuits and Semiconductor Failure Analysis(3), Nanowire Synthesis and Applications(2), Ferroelectric and Negative Capacitance Devices(2)

Publications18 total

Impact of high-pressure annealing on characteristics of InGaAs/InAlAs metamorphic high-electron mobility transistors
Applied Physics Letters·2026
Supple
AIP Publishing·2026Open Access
Supple
AIP Publishing·2026Open Access
<strong>Impact of High-Pressure Annealing on Characteristics of InGaAs/InAlAs Metamorphic High-Electron Mobility Transistors</strong>
AIP Publishing·2026Open Access
Study on the impact of deuterium annealing duration on MOSFET performance
Semiconductor Science and Technology·2025
Junction Depth Optimization in Trench Gate Nanosheet FETs for Reduced Off-State Current
Silicon·2025· 1 cited
First demonstration of rapid deuterium annealing for interface trap reduction in HKMG MOSFETs
Semiconductor Science and Technology·2025· 2 cited
Source / Drain Height Optimization in Trench Gate Nanosheet FETs for Reduced Off-State Current
2025Open Access
W-Shaped Silicon Channels to Increase the Channel Perimeter and Improve the Output Current of Multi-Bridge-Channel FETs
Silicon·2025· 2 cited
Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization
IEEE Transactions on Electron Devices·2025· 3 cited
V-Notch Shaped Contact Design in Nanosheet FETs for Enhancing Chip Performance
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems·2025
Improvement of Surface Roughness in SiO <sub>2</sub> Thin Films via Deuterium Annealing at 300 °C
IEEE Transactions on Nanotechnology·2024· 1 cited
Investigation of Deuterium De-Passivation by Repetitive Thermal Stress in CMOS Fabrication
IEEE Transactions on Device and Materials Reliability·2024· 1 cited
Durability of Low-Temperature Deuterium Annealing Against Ionizing Radiation in MOSFETs
IEEE Transactions on Electron Devices·2024· 2 cited
Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs
IEEE Journal of the Electron Devices Society·2024· 4 citedOpen Access
Low-Temperature Deuterium Annealing for High-Performance and Reliable Poly-Si Channel Thin-Film Transistors
IEEE Transactions on Electron Devices·2023· 6 cited
Physically Unclonable Function With a Rough Silicon Channel MOSFET
IEEE Transactions on Electron Devices·2023· 4 cited
Low-temperature deuterium annealing for improved electrical characteristics of SONOS
Microelectronics Reliability·2023· 7 cited

Frequent Co-authors

Jun-Young Park(14), Ju-Won Yeon(10), Moon-Kwon Lee(10), Eui-Cheol Yun(9), Hyojun Park(8), Ja-Yun Ku(5), Minwoo Kim(5), Daehan Jung(4), Dong-Hyun Wang(4), WooSub Byun(4), Deoksoo Park(4), Sung-Su Yoon(3), Su-Jin Jeon(3), D.S. Bang(3), Songyi Han(3), Yeonbin Kang(3), Jun-Young Park(3), Hyunchul Jang(3), Yumin Koh(3), Jae-Phil Shim(3)