Elizabeth A. Paisley

Sandia National Laboratories — United States

Engineering · Physical Sciences

14h-index543citations43works0.02yr avg
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Research Topics

Semiconductor materials and devices(14), GaN-based semiconductor devices and materials(12), ZnO doping and properties(10), Ferroelectric and Piezoelectric Materials(10), Ga2O3 and related materials(8)

Publications43 total

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices
IEEE Transactions on Electron Devices·2023· 3 cited
Aerosol Jet Printing of Carbon Nanotubes for Electronic Interconnects.
2022Open Access
Carbon stoichiometry and mechanical properties of high entropy carbides
Acta Materialia·2021· 80 citedOpen Access
Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes
Journal of Materials Science·2021· 5 cited
A High Entropy Oxide Designed to Catalyze CO Oxidation Without Precious Metals
ACS Applied Materials & Interfaces·2021· 70 citedOpen Access
Carbon Stoichiometry and Mechanical Properties of High Entropy Carbide
SSRN Electronic Journal·2020· 1 citedOpen Access
Fundamental Science of Doping and Defects in Ga<sub>2</sub>O<sub>3</sub> for Next Generation Power Semiconductors
2019Open Access
Interface Defect Engineering for Improved Graphene-Oxide-Semiconductor Junction Photodetectors
ACS Applied Nano Materials·2019· 17 citedOpen Access
MgO-CaO alloys for GaN and AlGaN gate oxides.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2019Open Access
Tunable Infrared Devices via Ferroelectrics: Tunable Infrared Devices via Ferroelectric Domain Reconfiguration (Advanced Optical Materials 24/2018)
Advanced Optical Materials·2018· 2 cited
Tunable Infrared Devices via Ferroelectric Domain Reconfiguration
Advanced Optical Materials·2018· 12 citedOpen Access
Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes
ACS Applied Materials & Interfaces·2018· 58 citedOpen Access
High Quality AlN Single Crystal Substrates for AlGaN-Based Devices
Materials science forum·2018· 26 cited
Backscattered Scanning Electron Microscopy Domain Imaging of Ferroelectric Films: in operando Ferroelectric Domain Structure Characterization
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2018Open Access
Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
Applied Physics Letters·2018· 4 cited
Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
APL Materials·2017· 5 citedOpen Access
Effect of microstructure on irradiated ferroelectric thin films
Journal of Applied Physics·2017· 8 cited
Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr1−<i>x</i>Ti<i>x</i>O3) thin films across the compositional phase diagram
Journal of Applied Physics·2017· 17 citedOpen Access
A Bayesian approach to modeling diffraction profiles and application to ferroelectric materials
Journal of Applied Crystallography·2017· 4 citedOpen Access
1.23 THE UTILITY OF OBJECTIVE MEASURES OF SOCIAL COMMUNICATION DEFICITS IN YOUNG CHILDREN WITH AUTISM SPECTRUM DISORDER
Journal of the American Academy of Child & Adolescent Psychiatry·2016
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Frequent Co-authors

Jon F. Ihlefeld(22), Jon‐Paul Maria(18), Zlatko Sitar(10), Ramón Collazo(9), Christopher T. Shelton(9), Mark D. Losego(7), H. S. Craft(6), Michael T. Brumbach(6), Stanley Atcitty(6), James M. LeBeau(5), Andrew A. Allerman(5), Andrew Armstrong(5), Robert Kaplar(5), Philip J. Ryan(4), Patrick E. Hopkins(4), Andrew R. Kitahara(4), Thomas E. Beechem(4), Seiji Mita(4), M. King(4), Brian M. Foley(3)