T. D. Osentowski

Hewlett-Packard (United States) — United States

Engineering · Physical Sciences

13h-index967citations24works0.02yr avg
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Research Topics

Semiconductor Lasers and Optical Devices(18), Semiconductor Quantum Structures and Devices(14), GaN-based semiconductor devices and materials(8), Semiconductor materials and devices(8), Photonic and Optical Devices(6)

Publications24 total

High Performance AlGaInP Light-emitting Diodes
2005
Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature
2005
Reliability of oxide VCSELs in non-hermetic environments
2003· 10 cited
Reliability and failure mechanisms of oxide VCSELs in non-hermetic enviroments
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2003· 20 cited
Characterization of failure mechanisms for oxide VCSELs
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2003· 14 cited
Injection of point defects by oxidation of AlGaAs
MRS Proceedings·2002· 3 cited
Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium
Journal of Electronic Materials·1999· 16 cited
<title>High-performance AlGaInP light-emitting diodes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1997· 4 cited
Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes
Applied Physics Letters·1994· 258 cited
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers
Journal of Electronic Materials·1992· 48 cited
Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
Applied Physics Letters·1992· 142 cited
Planar native-oxide buried-mesa Al<i>x</i>Ga1−<i>x</i>As-In0.5(Al<i>y</i>Ga1−<i>y</i>)0.5P- In0.5(Al<i>z</i>Ga1−<i>z</i>)0.5P visible-spectrum laser diodes
Journal of Applied Physics·1992· 4 cited
The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer
Journal of Electronic Materials·1991· 83 cited
Native-oxide stripe-geometry In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P-In0.5Ga0.5P heterostructure laser diodes
Applied Physics Letters·1991· 17 cited
High performance AlGaInP visible light-emitting diodes
Applied Physics Letters·1990· 216 cited
Hydrogenation-defined stripe-geometry In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P quantum-well lasers
Journal of Applied Physics·1990· 7 cited
Time-resolved Photoluminescence Of (Al)GaInP
1990
Impurity-induced layer disordering in In0.5(Al<i>x</i> Ga1−<i>x</i>)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers
Journal of Applied Physics·1989· 21 cited
Photopumped phonon-assisted laser operation (77 K) of In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P quantum well heterostructures
Applied Physics Letters·1989· 4 cited
Comparison of SiIII-SiV and SiIII-VIII diffusion models in III-V heterostructures lattice matched to GaAs
Applied Physics Letters·1988· 9 cited
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Frequent Co-authors

R. M. Fletcher(19), Chia-Chen Kuo(17), M. G. Craford(17), N. Holonyak(12), D. W. Nam(7), F. A. Kish(5), V. M. Robbins(5), John M. Dallesasse(5), M. J. Peanasky(4), K. C. Hsieh(4), J. E. Baker(4), S. A. Maranowski(4), D.G. Deppe(4), D.C. DeFevere(3), Jingxi Yu(3), D. A. Steigerwald(3), Suning Xie(3), Robert W. Herrick(3), M. Keever(3), Scott A. McHugo(3)