R. M. Fletcher

Hewlett-Packard (United States) — United States

Physics and Astronomy · Physical Sciences

17h-index2.7kcitations43works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(28), Semiconductor Lasers and Optical Devices(19), GaN-based semiconductor devices and materials(16), Semiconductor materials and interfaces(7), Photonic and Optical Devices(6)

Publications43 total

High Performance AlGaInP Light-emitting Diodes
2005
Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature
2005
High-flux and high-efficiency nitride-based light-emitting devices
2003· 1 cited
The LED lightbulb: are we there yet? progress and challenges for solid state illumination
Conference on Lasers and Electro-Optics·2003· 20 cited
The LED light bulb: are we there yet? Progress and challenges for solid-state lighting
Conference on Lasers and Electro-Optics·2003
High Power LEDs - Technology Status and Market Applications
physica status solidi (a)·2002· 224 cited
Advances in InGaN technology for light-emitting diodes and semiconductor lasers
2002
Visible light-emitting diodes in display applications-an old technology gets a new life
2002· 2 cited
Illumination with solid state lighting technology
IEEE Journal of Selected Topics in Quantum Electronics·2002· 1.1k cited
<title>High-brightness AlGaInN light-emitting diodes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2000· 33 cited
Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes
Materials Science and Engineering B·1999· 165 cited
High Efficiency LEDS A Bright New Light Source Joins the Lighting Industry
Optics and Photonics News·1999· 5 cited
Chapter 3 High-Brightness Nitride-Based Visible-Light-Emitting Diodes
Semiconductors and semimetals·1999· 1 cited
III–V Nitride semiconductors for high-performance blue and green light-emitting devices
JOM·1997· 42 cited
<title>High-performance AlGaInP light-emitting diodes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1997· 4 cited
Chapter 5 AlGalnP Light-Emitting Diodes
Semiconductors and semimetals·1997· 31 cited
Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes
Applied Physics Letters·1994· 258 cited
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers
Journal of Electronic Materials·1992· 48 cited
Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
Applied Physics Letters·1992· 142 cited
Planar native-oxide buried-mesa Al<i>x</i>Ga1−<i>x</i>As-In0.5(Al<i>y</i>Ga1−<i>y</i>)0.5P- In0.5(Al<i>z</i>Ga1−<i>z</i>)0.5P visible-spectrum laser diodes
Journal of Applied Physics·1992· 4 cited
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Frequent Co-authors

M. G. Craford(20), T. D. Osentowski(19), Chia-Chen Kuo(17), N. Holonyak(12), David K. Wagner(10), D. A. Steigerwald(9), J. M. Ballantyne(9), Serge Rudaz(7), F. A. Kish(7), D. W. Nam(7), P. Martin(6), V. M. Robbins(5), Michael R. Krames(5), Regina Mueller‐Mach(5), John M. Dallesasse(5), D. M. Collins(4), M. J. Ludowise(4), Jingxi Yu(4), Lou W. Cook(4), Gerd Mueller(4)