Roy Murray

Engineering · Physical Sciences

11h-index439citations48works0.02yr avg
OpenAlex↗ORCID↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Organic Electronics and Photovoltaics(15), Conducting polymers and applications(15), Semiconductor materials and devices(11), Advancements in Semiconductor Devices and Circuit Design(11), Quantum and electron transport phenomena(6)

Publications48 total

Analyzing novel fabrication and doping methods of organic photovoltaic devices through a lumped circuit model
Library, Museums and Press - UDSpace (University of Delaware)·2024Open Access
A new application for III–V quantum well systems—efficiency enhancement in solar cells
2020· 1 cited
Results and model for single-gate ratchet charge pumping
Journal of Applied Physics·2020· 3 cited
Long-term drift of Si-MOS quantum dots with intentional donor implants
Scientific Reports·2019Open Access
Results and model for single-gate ratchet charge pumping
Bulletin of the American Physical Society·2019
Revealing the diffusion of aluminum in organic solar cells
Japanese Journal of Applied Physics·2019· 6 cited
Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures
AIP Advances·2018· 5 citedOpen Access
One-Gate Ratchet Single-Electron Pump: Device Failure Mechanisms
2018· 1 cited
Impact of Si:P Delta-layer Quality on the Electrical Transport of Si:P STM Patterned Devices
Bulletin of the American Physical Society·2018
Weak localization in variable-concentration embedded phosphorus delta layers in silicon produced by variable PH 3 dosing
Bulletin of the American Physical Society·2018
Device Criteria for Accurate Single Electron Pumping
Bulletin of the American Physical Society·2018
Seeking Reduced Charge Offset Drift Using Confined, Plasma Oxidized AlO x in SETs
Bulletin of the American Physical Society·2018
Weak localization thickness measurements of embedded phosphorus delta layers in silicon produced by PH3 dosing | NIST
Physical Review Applied·2018
High resolution thickness measurements of ultrathin Si:P monolayers using weak localization
Applied Physics Letters·2018· 26 cited
Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers
Nanoscale·2018· 25 citedOpen Access
AC signal characterization for optimization of a CMOS single-electron pump
Nanotechnology·2017· 3 citedOpen Access
Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
arXiv (Cornell University)·2017Open Access
A comparative study on the morphology of P3HT:PCBM solar cells with the addition of Fe3O4 nanoparticles by spin and rod coating methods
Journal of Nanoparticle Research·2017· 15 cited
Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon | NIST
2017
Stability of metallic single-electron devices with plasma oxidized, cobalt confined AlO$_{\mathrm{x}}$ tunnel barriers
Bulletin of the American Physical Society·2017
page 1 of 3Next →

Frequent Co-authors

S. İsmat Shah(13), M. D. Stewart(12), Neil M. Zimmerman(12), Joseph A. Hagmann(11), Xiqiao Wang(10), Pradeep Namboodiri(10), Richard M. Silver(10), Curt A. Richter(10), Nopporn Rujisamphan(10), Jonathan Wyrick(9), Muhammad Ikram(5), Salamat Ali(5), Justin K. Perron(5), Aruna Ramanayaka(4), J. M. Pomeroy(4), Fei Deng(3), Steven Hegedus(3), Thidarat Supasai(3), Michael H. Stewart(3), A. Hussain(2)