Xiqiao Wang

National Institute of Standards and Technology — United States

Physics and Astronomy · Physical Sciences

15h-index564citations72works2.12yr avg
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Research Topics

Quantum and electron transport phenomena(21), Semiconductor materials and devices(19), Surface and Thin Film Phenomena(16), Advancements in Semiconductor Devices and Circuit Design(13), Electronic and Structural Properties of Oxides(8)

Publications72 total

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2024
Precision Frequency Tuning of Tunable Transmon Qubits Using Alternating-Bias Assisted Annealing
2024· 1 cited
Alternating-bias assisted annealing of amorphous oxide tunnel junctions
Communications Materials·2024· 14 citedOpen Access
Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing
arXiv (Cornell University)·2024Open Access
DC to GHz measurements of a near-ideal 2D material: P+ monolayers
AIP Advances·2024Open Access
Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
2024Open Access
Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
arXiv (Cornell University)·2024· 1 citedOpen Access
Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy
Nanotechnology Reviews·2024· 1 citedOpen Access
Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots
Nature Communications·2022· 71 citedOpen Access
Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H–Si Using STM and DFT
ACS Nano·2022· 31 cited
9 Writing about Where We Are from: Writing Across Languages, Genres and Spaces
Multilingual Matters eBooks·2022
Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT
arXiv (Cornell University)·2021Open Access
Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots
arXiv (Cornell University)·2021· 4 citedOpen Access
Writing-Theory Cartoon: Toward a Translingual and Multimodal Pedagogy
Utah State University Press eBooks·2021· 13 cited
Simulating STM Images for Atomic Precision Dopant Placement in Si
Bulletin of the American Physical Society·2021
Characterizing electron temperature and a cryogenic printed circuit board for spin-based quantum computing in Silicon
Bulletin of the American Physical Society·2021
Atom-Based Silicon Devices for Quantum Computing and Analog Quantum Simulation
Bulletin of the American Physical Society·2021
Understanding charge-stability diagrams of dopant arrays in Si
Bulletin of the American Physical Society·2021
Atomic precision fabrication of quantum devices down to the single atom regime
2021· 1 cited
Electron-electron interactions in low-dimensional Si:P delta layers
Physical review. B./Physical review. B·2020· 3 citedOpen Access
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Frequent Co-authors

Richard M. Silver(30), Pradeep Namboodiri(29), Jonathan Wyrick(25), Ranjit V. Kashid(17), M. D. Stewart(13), Joseph A. Hagmann(11), Scott Schmucker(10), Curt A. Richter(10), Fan Fei(8), Roy Murray(7), Steven Fraiberg(5), Garnett W. Bryant(5), David P. Pappas(5), Cameron Kopas(5), Joel Howard(5), Kameshwar Yadavalli(5), Eyob A. Sete(5), Andrew Bestwick(5), Josh Mutus(4), Xiaoye You(3)