M. F. Fyhn

Aarhus University — Denmark

Engineering · Physical Sciences

6h-index112citations9works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(5), Semiconductor materials and interfaces(4), Silicon Nanostructures and Photoluminescence(2), Optical Coatings and Gratings(2), Ion-surface interactions and analysis(2)

Publications9 total

Electron energy-loss spectroscopy of single nanocrystals: mapping of tin allotropes
Nanotechnology·2018· 4 cited
Monte-Carlo simulations of 2-MeV α-particle channeling in Si1−Sn alloy
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2000· 1 cited
α-Sn and β-Sn precipitates in annealed epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>0.95</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sn</mml:mi></mml:mrow><mml:mrow><mml:mn>0.05</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
Physical review. B, Condensed matter·1999· 26 citedOpen Access
Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy
Applied Physics A·1999· 8 cited
Relaxation of strained, epitaxial Si1−xSnx
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1998· 25 cited
Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−<i>x</i>Ge<i>x</i> substrates
Applied Physics Letters·1996· 9 cited
Recrystallisation of relaxed SiGe alloy layers
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1995· 11 cited
Peculiarities in the Epitaxial Regrowth of Ion-Implanted Si<sub>1−x</sub>Ge<sub>x</sub> Alloy Layers Grown on Compositionally Graded Buffers
MRS Proceedings·1994· 5 cited
Solid phase epitaxy of relaxed, implantation-amorphized Si1−<i>x</i>Ge<i>x</i> alloy layers grown on compositionally graded buffers
Applied Physics Letters·1993· 23 cited

Frequent Co-authors

A. Nylandsted Larsen(8), J. Chevallier(4), S. Yu. Shiryaev(4), J. Lundsgaard Hansen(2), R. Feidenhans’l(1), M. Seibt(1), P. Kringhøj(1), R. G. Elliman(1), J. Lundsgaard Hansen(1), Søren Roesgaard(1), Quentin M. Ramasse(1), Brian Julsgaard(1), Edouard V. Monakhov(1)