S. Yu. Shiryaev

Danfoss (Denmark) — Denmark

Engineering · Physical Sciences

15h-index765citations48works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(34), Semiconductor materials and interfaces(28), Silicon Nanostructures and Photoluminescence(23), Thin-Film Transistor Technologies(9), Ion-surface interactions and analysis(8)

Publications48 total

High-pressure silicon sensor with low-cost packaging
Sensors and Actuators A Physical·2001· 28 cited
Effect of composition and annealing on structural defects in high-dose arsenic-implanted Si1−xGex alloys
Journal of Applied Physics·1998· 5 cited
Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates
Thin Solid Films·1998· 3 cited
Ordering of germanium islands in the system pre-structured by misfit dislocations
Surface Science·1998· 5 cited
Low-dimensional structures generated by misfit dislocations in the bulk of Si1−xGex/Si heteroepitaxial systems
Applied Physics Letters·1997· 5 citedOpen Access
Fullerene ion (C60+) damage in Si at 25°C
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1997· 14 cited
Isoconcentration studies of antimony diffusion in silicon
Journal of Applied Physics·1997· 16 cited
Dislocation patterning — a new tool for spatial manipulation of Ge islands
Thin Solid Films·1997· 26 cited
Relaxed epitaxial Si1−xGex grown by MBE
Thin Solid Films·1997· 16 cited
Nanoscale Structuring by Misfit Dislocations in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Ge</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mi>S</mml:mi><mml:mi>i</mml:mi></mml:math>Epitaxial Systems
Physical Review Letters·1997· 183 citedOpen Access
Rapid thermal annealing of arsenic implanted relaxed Si1−Ge
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1996· 6 cited
Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−<i>x</i>Ge<i>x</i> substrates
Applied Physics Letters·1996· 9 cited
Zero- and one-dimensional nanostructures on an surface
Nanotechnology·1996· 1 cited
Rapid thermal annealing of arsenic-implanted Si0.6Ge0.4 alloys: Temperature effects
Applied Physics Letters·1996· 13 cited
Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth
Elsevier eBooks·1996
Dislocation patterning and nanostructure engineering in compositionally graded Si1−xGex/Si layer systems
Elsevier eBooks·1996
Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth
Journal of Crystal Growth·1995· 9 cited
Recrystallisation of relaxed SiGe alloy layers
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1995· 11 cited
Strain relaxation and self-organization phenomena in heteroepitaxial systems
Physical review. B, Condensed matter·1995· 10 citedOpen Access
Pseudomorphic Si1−<i>x</i>Sn<i>x</i> alloy films grown by molecular beam epitaxy on Si
Applied Physics Letters·1995· 40 cited
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Frequent Co-authors

A. Nylandsted Larsen(27), J. Lundsgaard Hansen(11), J. W. Petersen(10), Flemming Jensen(9), Ф. Ф. Комаров(9), J. Lundsgaard Hansen(6), M. F. Fyhn(4), P. Kringhøj(4), V. D. Kuryazov(4), V. S. Solovev(4), P. Kringho j(3), E.V. Pedersen(3), V. S. Tishkov(3), П. И. Гайдук(3), Erik Vilain Thomsen(3), J. Hartung(2), Erik S. Sørensen(2), P. Tidemand-Petersson(2), А. П. Новиков(2), T. T. Samoilyuk(2)