J. Hartung

University of Manchester — United Kingdom

Engineering · Physical Sciences

9h-index259citations18works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(9), Silicon Nanostructures and Photoluminescence(9), Semiconductor Quantum Structures and Devices(6), Semiconductor materials and interfaces(6), Semiconductor materials and devices(5)

Publications18 total

Erbium in silicon–germanium quantum wells
Journal of Luminescence·1998· 2 cited
Photo- and Electroluminescence of Erbium-Doped Silicon
Materials science forum·1997· 4 cited
Relaxed epitaxial Si1−xGex grown by MBE
Thin Solid Films·1997· 16 cited
Luminescence Decay of the 1.54 μm Emission from Erbium in Silicon
MRS Proceedings·1996· 4 cited
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy
Journal of Crystal Growth·1995· 1 cited
Detection of residual defects in silicon doped by neutron transmutation
Journal of Applied Physics·1995· 27 cited
Growth and characterization of Si1−<i>x</i>Ge<i>x</i>/Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxy
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1994· 23 cited
Photoluminescence from Localized Excitons in Si/Ge Superlattices
Japanese Journal of Applied Physics·1994· 3 cited
Growth and characterization of compositionally graded, relaxed Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>
Physica Scripta·1994· 32 cited
Shallow hydrogen-related donors in silicon
Physical review. B, Condensed matter·1993· 66 cited
Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon
Materials science forum·1993· 2 cited
Observation of Ge-Vibration Modes in the Luminescence of Si-Rich Si1-xGex Layers Grown by Molecular Beam Epitaxy
1993
Photoluminescence from Si/Ge Superlattices
1993
Effects of isotope disorder on phonons in germanium determined from bound exciton luminescence
Semiconductor Science and Technology·1993· 13 cited
Photothermal Ionization Studies of Effective Mass-Like Hydrogen-Related Donors in Silicon
Materials science forum·1991· 1 cited
Defects created by hydrogen implantation into silicon
Materials Science and Engineering B·1989· 19 cited
Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon
Applied Physics A·1989· 34 cited
The Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in Silicon
Materials science forum·1989· 12 cited

Frequent Co-authors

E C Lightowlers(4), Joerg Weber(3), Jörg Weber(2), Jennifer A. Griffin(2), J. Weber(2), L. Genzel(2), A. Nylandsted Larsen(2), S. Yu. Shiryaev(2), A. Marinopoulou(2), Nadia Anwar(2), G. Parry(2), Mingyu Xie(2), S. M. Mokler(2), B.A. Joyce(2), G. Davies(2), M. Q. Huda(2), C. Jeynes(2), А. R. Peaker(2), V. Arbet-Engels(2), V. Higgs(2)