P. Kringho j

Aarhus University — Denmark

Engineering · Physical Sciences

15h-index597citations21works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(15), Semiconductor materials and interfaces(14), Ion-surface interactions and analysis(7), Integrated Circuits and Semiconductor Failure Analysis(7), Semiconductor materials and devices(4)

Publications21 total

Energy levels of Zn in Si1−XGeX alloys
Applied Physics Letters·1998· 8 cited
Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si
Applied Physics Letters·1997· 37 cited
Evolution from point to extended defects in ion implanted silicon
Journal of Applied Physics·1997· 141 cited
Isoconcentration studies of antimony diffusion in silicon
Journal of Applied Physics·1997· 16 cited
Electronic defect levels in relaxed, epitaxial<i>p</i>-type Si1−xGex layers produced by MeV proton irradiation
Journal of Applied Physics·1997· 32 cited
Substitutional gold in Si1−<i>x</i>Ge<i>x</i>
Applied Physics Letters·1996· 19 cited
Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon
Applied Physics Letters·1996· 41 cited
Electrical inactivation in Pb-implanted InP
Journal of Applied Physics·1996
Diffusion of Sb in relaxed Si1−<i>x</i>Ge<i>x</i>
Applied Physics Letters·1996· 66 cited
Silicon interstitials: Injection during palladium silicide formation and trapping by ion implantation damage
Applied Physics Letters·1996· 1 cited
{111} defects in 1-MeV-silicon-ion-implanted silicon
Physical review. B, Condensed matter·1995· 24 cited
Irradiation-induced defect states in epitaxial<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>alloy layers
Physical review. B, Condensed matter·1995· 37 cited
Pseudomorphic Si1−<i>x</i>Sn<i>x</i> alloy films grown by molecular beam epitaxy on Si
Applied Physics Letters·1995· 40 cited
Rapid thermal annealing of Sn-implanted InP
Journal of Applied Physics·1995· 5 cited
Electrically active subthreshold damage in Si ion implanted with Si, Ge, and Sn
Applied Physics Letters·1994· 13 cited
Diffusion of ion implanted Sn in Si, Si1−<i>x</i>Ge<i>x</i>, and Ge
Applied Physics Letters·1994· 37 cited
Lattice location and electrical activity of Ge co-implanted with P into InP
Applied Physics Letters·1994· 17 cited
Lattice location and electrical activity of ion-implanted Sn in InP
Applied Physics Letters·1993· 11 cited
Structural and electrical characteristics of Ge and Se implanted InP after rapid thermal annealing
Journal of Applied Physics·1992· 18 cited
The lattice location of ion-implanted Ga, Ge, and Se in InP
Journal of Applied Physics·1992· 15 cited
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Frequent Co-authors

A. Nylandsted Larsen(8), S. Yu. Shiryaev(3), J. L. Benton(2), Sebania Libertino(2), D. J. Eaglesham(2), J. M. Poate(2), S. Coffa(2), R. G. Elliman(2), C. Jagadish(2), M. C. Ridgway(2), K. S. Jones(1), M. Petravić(1), J. Lundsgaard Hansen(1), D. C. Jacobson(1), P.G. Fuochi(1), Marco Lavalle(1), E. V. Monakhov(1), Chih‐Lung Chou(1), D. J. H. Cockayne(1), Jin Zou(1)