B.M. Haugerud

Georgia Institute of Technology — United States

Engineering · Physical Sciences

12h-index446citations20works0.02yr avg
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Research Topics

Semiconductor materials and devices(13), Advancements in Semiconductor Devices and Circuit Design(13), Radiation Effects in Electronics(10), Radio Frequency Integrated Circuit Design(7), Silicon and Solar Cell Technologies(2)

Publications20 total

Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits
IEEE Transactions on Nuclear Science·2006· 49 cited
An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers
Solid-State Electronics·2006· 1 cited
Proton and gamma radiation effects in a new first-generation SiGe HBT technology
Solid-State Electronics·2006· 31 cited
Recent Results on SEU Hardening of SiGe HBT Logic Circuits
NASA Technical Reports Server (NASA)·2006
A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs
IEEE Transactions on Nuclear Science·2005· 50 cited
The effects of proton irradiation on the operating voltage constraints of SiGe HBTs
IEEE Transactions on Nuclear Science·2005· 6 cited
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
IEEE Transactions on Nuclear Science·2005· 19 cited
The impact of substrate bias on proton damage in 130 nm CMOS technology
2005· 18 cited
Impact of proton irradiation on the RF performance of 0.12 /μm CMOS technology
2005· 6 cited
The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology
Solid-State Electronics·2005· 10 cited
Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology
UPT. Syiah Kuala University Library (Syiah Kuala University)·2005· 1 citedOpen Access
Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology
2005· 2 cited
Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs
IEEE Transactions on Nuclear Science·2004· 49 cited
Proton radiation effects in 4H-SiC diodes and MOS capacitors
IEEE Transactions on Nuclear Science·2004· 51 cited
The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs
IEEE Transactions on Nuclear Science·2004· 28 cited
Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials
IEEE Transactions on Nuclear Science·2004· 21 cited
Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology
IEEE Transactions on Nuclear Science·2004· 24 cited
The effects of proton irradiation on the performance of mm-wave transmission lines implemented in SiGe technology
IEEE Transactions on Nuclear Science·2004· 6 cited
Elevated-temperature electrical characteristics of mechanically strained Si devices
Journal of Applied Physics·2004· 12 cited
Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors
Journal of Applied Physics·2003· 62 cited

Frequent Co-authors

John D. Cressler(16), Akil K. Sutton(15), Paul W. Marshall(15), Robert A. Reed(7), Cheryl J. Marshall(6), Alvin Joseph(6), Wei-Min Lance Kuo(5), A. P. Gnana Prakash(4), Mustayeen B. Nayeem(4), R. E. Belford(3), Ramkumar Krithivasan(3), Yuan Lu(3), Jonathan P. Comeau(3), Lucy A. Bosworth(2), Tianbing Chen(2), Ray Ladbury(2), Martin A. Carts(2), Guofu Niu(2), Enhai Zhao(2), R. Krithivasan(2)