M. Seyboth

Physics and Astronomy · Physical Sciences

9h-index290citations33works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(32), Ga2O3 and related materials(15), ZnO doping and properties(13), Semiconductor Quantum Structures and Devices(12), Semiconductor materials and devices(7)

Publications33 total

In-Situ Characterization During MOVPE Growth of III-Nitrides using Reflectrometry
2015
Reduction of dislocation density and dislocation analysis of MOVPE grown GaN layers
Università del Salento·2015Open Access
Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes
Journal of Lightwave Technology·2004· 13 cited
Time resolved study of laser diode characteristics during pulsed operation
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 18 cited
Determination of dislocation density in epitaxially grown GaN using an HCl etching process
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 14 citedOpen Access
Influence of polarization on the properties of GaN based FET structures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 5 cited
Absorption of guided modes in light-emitting diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2003· 3 cited
Transient characteristics of gan-based heterostructure field-effect transistors
IEEE Transactions on Microwave Theory and Techniques·2003· 70 cited
Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains
physica status solidi (b)·2002· 1 cited
Substrates for wide bandgap nitrides
Journal of Materials Science Materials in Electronics·2002· 6 cited
First AlGaN/GaN MOSFET with photoanodic gate dielectric
Materials Science and Engineering B·2002· 48 cited
Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography
physica status solidi (a)·2001· 5 cited
Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography
physica status solidi (a)·2001
Extraction Efficiency of GaN-Based LEDs
physica status solidi (a)·2001· 26 cited
Extraction Efficiency of GaN-Based LEDs
physica status solidi (a)·2001· 2 citedOpen Access
Characterization of etched facets for GaN-based lasers
Journal of Crystal Growth·2001· 8 cited
Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy
Journal of Crystal Growth·2001· 10 cited
Multiple-step annealing for 50% enhanced p-conductivity of GaN
Journal of Crystal Growth·2001· 6 cited
Low resistive <i>p</i>-type GaN using two-step rapid thermal annealing processes
Journal of Applied Physics·2001· 8 cited
First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide
Electronics Letters·2001· 11 cited
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Frequent Co-authors

V. Schwegler(19), M. Scherer(15), M. Kamp(12), C. Kirchner(10), Frank Habel(9), Sven Schad(7), Markus Kamp(5), J. Christen(5), Christoph Eichler(4), K.J. Ebeling(4), Ulrich Stempfle(4), W. Limmer(4), R. Beccard(4), M. Heuken(4), I. Daumiller(3), Martin Neuburger(3), D. Mistele(3), T. Rotter(3), F. Fedler(3), H. Klausing(3)