F. Fedler

Leibniz University Hannover — Germany

Physics and Astronomy · Physical Sciences

10h-index460citations33works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(33), Ga2O3 and related materials(22), ZnO doping and properties(11), Semiconductor materials and devices(10), Semiconductor Quantum Structures and Devices(7)

Publications33 total

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well
The European Physical Journal Applied Physics·2004· 3 cited
Improved quality of plasma assisted MBE‐grown GaN/AlGaN quantum wells revealed by two‐wavelength excited photoluminescence
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 3 cited
HRTEM study of AlxGa1−xN/AlN DBR mirrors
Diamond and Related Materials·2003· 5 cited
Herstellung hochreflektierender AlGaN/AlN-DBR- und UV-VCSEL-Strukturen mittels plasmaunterstützter Molekularstrahlepitaxie
Institutional Repository of Leibniz Universität Hannover (Leibniz Universität Hannover)·2003Open Access
High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA‐MBE
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2002· 8 citedOpen Access
Influence of Process Technology on DC-Performance of GaN-Based HFETs
physica status solidi (a)·2002· 3 cited
Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors
physica status solidi (a)·2002· 9 cited
Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers
physica status solidi (a)·2002
Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction
Journal of Crystal Growth·2002· 16 cited
First AlGaN/GaN MOSFET with photoanodic gate dielectric
Materials Science and Engineering B·2002· 48 cited
Influence of Surface Treatments on DC-Performance of GaN-Based HFETs
Open Repository and Bibliography (University of Luxembourg)·2002Open Access
Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics
physica status solidi (a)·2001· 1 cited
Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics
physica status solidi (a)·2001· 10 cited
Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres
Journal of Crystal Growth·2001· 31 cited
Electrical properties of photoanodically generated thin oxide films on n-GaN
Journal of Crystal Growth·2001· 13 cited
First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide
Electronics Letters·2001· 11 cited
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
Journal of Crystal Growth·2001· 121 cited
Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy
MRS Proceedings·2001· 1 cited
Characterization of Al<sub>x</sub>Ga<sub>1-x</sub>N/ AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy
MRS Proceedings·2001
AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments
MRS Proceedings·2001· 1 cited
page 1 of 2Next →

Frequent Co-authors

J. Graul(27), H. Klausing(26), J. Aderhold(25), D. Mistele(25), O. Semchinova(24), J. Stemmer(20), T. Rotter(18), R. J. Hauenstein(7), Z. Bougrioua(5), Sergio I. Molina(5), V. Schwegler(4), Arturo Ponce(4), V. Yu. Davydov(3), K.S. Röver(3), M. Seyboth(3), Mark Osteen(3), S. Panzer(3), S. Paprotta(2), R. Ferretti(2), Ana M. Sánchez(2)