J. Graul

Physics and Astronomy · Physical Sciences

16h-index3.5kcitations73works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(47), Ga2O3 and related materials(29), Semiconductor materials and devices(24), ZnO doping and properties(16), Semiconductor Quantum Structures and Devices(10)

Publications73 total

AVO: today and tomorrow: Abstract
2018Open Access
Correcting an RMS velocity function directly from measurements of residual normal moveout
2006· 1 cited
Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well
The European Physical Journal Applied Physics·2004· 3 cited
Photoluminescence, depth profile, and lattice instability of hexagonal InN films
Applied Physics Letters·2003· 22 cited
Improved quality of plasma assisted MBE‐grown GaN/AlGaN quantum wells revealed by two‐wavelength excited photoluminescence
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 3 cited
Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys
physica status solidi (b)·2003· 29 cited
Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors
Journal of Electronic Materials·2003· 4 cited
HRTEM study of AlxGa1−xN/AlN DBR mirrors
Diamond and Related Materials·2003· 5 cited
AlGaN/GaN-heterojunction FET with inverted 2DEG Channel
AMS Acta (University of Bologna)·2003Open Access
Structural and Optical Characterization of InGaN Layers Grown by MOMBE
MRS Proceedings·2003
High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA‐MBE
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2002· 8 citedOpen Access
Band Gap of Hexagonal InN and InGaN Alloys
physica status solidi (b)·2002· 306 citedOpen Access
Influence of Process Technology on DC-Performance of GaN-Based HFETs
physica status solidi (a)·2002· 3 cited
Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors
physica status solidi (a)·2002· 9 cited
Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers
physica status solidi (a)·2002
<title>Bandgap of hexagonal InN and InGaN alloys</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2002· 5 cited
Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction
Journal of Crystal Growth·2002· 16 cited
First AlGaN/GaN MOSFET with photoanodic gate dielectric
Materials Science and Engineering B·2002· 48 cited
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
physica status solidi (b)·2002· 286 cited
Composition dependence of optical phonon energies and Raman line broadening in hexagonal<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:math>alloys
Physical review. B, Condensed matter·2002· 165 cited
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Frequent Co-authors

J. Aderhold(33), O. Semchinova(27), D. Mistele(22), H. Klausing(21), F. Fedler(20), J. Stemmer(20), T. Rotter(18), V. Yu. Davydov(13), A. A. Klochikhin(7), V. V. Emtsev(7), Sergio I. Molina(6), Hisatomo Harima(5), A. N. Smirnov(5), F. Bechstedt(4), I. N. Goncharuk(4), D. Uffmann(4), Akihiro Hashimoto(4), Akio Yamamoto(4), Ana M. Sánchez(4), J. Furthm�ller(3)